21.1: A 513‐ppi FFS‐Mode TFT‐LCD using CAAC Oxide Semiconductor Fabricated by a 6‐Mask Proces

Yamashita, Akio; Kubota, Daisuke; Moriya, Koji; Kubota, Yusuke; Jikumaru, Mika; Nakano, Masaru; Baba, H.; Hirakata, Yoichi; Koyama, Jun; Yamazaki, Shunpei; Katayama, Masahiro; Misawa, Chieko; Matsukizono, Hiroshi; Kanzaki, Yohsuke; Kaneko, Seiji; Mori, Shigeyasu; Matsuo, Takami

doi:10.1002/j.2168-0159.2014.tb00072.x

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…As described above, the control of the conductivity of IGZO thin films is very important and useful for many applications. 17 The change in resistance of OS films is attributed to the formation of donor states, but the physical origin of the major donor states in IGZO films remains subject to debate. Thus, to better understand the carrier generation mechanisms in OS thin films, we investigated the relationship between conductivity and the concentration of H and V O in the OS films by applying hard X-ray photoelectron spectroscopy (HXPES), secondary ion mass spectroscopy (SIMS), and thermal desorption spectroscopy (TDS), and discussed the relationship between carrier concentration estimated by Hall effect measurement and H concentration.…”

Section: Introductionmentioning

confidence: 99%

Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

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To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V O ), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V O sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V O and H in crystalline InGaO 3 (ZnO) m (m ¼ 1). The results indicate that when H is trapped in V O , a stable complex is created that serves as a shallow-level donor. V C 2014 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

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“…Accordingly, both low power consumption and high resolution can be achieved simultaneously [9]. Thus, we examined improvement of optical characteristics that remain problematic for visibility.…”

Section: L=3μmmentioning

confidence: 99%

73.4: Reflective LCD with High Reflectance and Color Reproductivity for Reduced Eye Strain

Kubota

Niikura

Hatsumi

et al. 2015

Symp Digest of Tech Papers

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“…In particular, we used a c-axis aligned crystalline oxide semiconductor (CAAC-OS) to fabricate highly reliable field-effect transistors (FETs) [10][11][12][13][14]. Employing bottom-gate top-contact (BGTC) CAAC-OS FETs, we fabricated 513-ppi transmissive liquid-crystal display (LCD) panels and 434-ppi reflective LCD panels [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%