200mm GaAs crystal growth by the temperature gradient controlled LEC method

Seidl, A.; Eichler, S.; Flade, T.; Jurisch, M.; Köhler, Andreas; Kretzer, U.; Weinert, B.

doi:10.1016/s0022-0248(01)00953-8

Cited by 21 publications

(10 citation statements)

References 9 publications

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“…After reaction and homogenization the melt is directionally solidified. Average cycle time is (12)(13)(14)(15)(16)(17)(18) h. Near-net shape ingots fitted to the LEC or VGF growth crucibles are produced in pretreated pBN crucibles. The ingot extraction procedure from the crucible determines crucible life time and is an important issue which is under current consideration.…”

Section: Synthesismentioning

confidence: 99%

See 1 more Smart Citation

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Jurisch

Börner

Bünger

et al. 2005

Journal of Crystal Growth

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Section: Synthesismentioning

confidence: 99%

“…SI GaAs single crystals 150 mm + from 30 to 45 kg melt size are commercially grown [11,12] from which up to 300 wafers can be produced. The capability of the LEC pullers for growing 200 mm + GaAs single crystals has been reported recently [13,14].…”

Section: Crystal Lengthmentioning

confidence: 99%

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Jurisch

Börner

Bünger

et al. 2005

Journal of Crystal Growth

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“…Much effort has been made to simulate global heat transfer [2][3][4][5], melt flow [6], the dynamics of the melt/crystal interface [7][8][9] or interactions between these effects, for liquid encapsulated Czochralski and vapor pressure controlled Czochralski (VCz) configurations, using various two-dimensional (2D) approaches. At the ____________________ * Corresponding author: e-mail: yakovlev@softimpact.ru same time, a common specificity of Czochralski growth that should be adequately described by modeling is the melt turbulent flow, which is essentially unsteady and three-dimensional.…”

Section: Introductionmentioning

confidence: 99%

Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

Yakovlev¹,

Kalaev²,

Bystrova³

et al. 2003

Cryst. Res. Technol.

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The results of three-dimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The three-dimensional model is combined with axisymmetric calculations of heat and mass transfer in the entire furnace. A comprehensive numerical analysis using various two-dimensional steady and three-dimensional unsteady models is also performed to explore their possibilities in predicting the melt/crystal interface geometry. The results obtained with different numerical approaches are analyzed and compared with available experimental data. It has been found that three-dimensional unsteady consideration of heat and mass transfer in the crystallization zone provides a good reproduction of the solidification front geometry for both GaAs and InP crystal growth.

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“…Global process simulations were used to scale-up the growth of GaAs crystals by the LEC [6] or VCz [7,8] and VGF [9,10] method. Global numerical simulations were performed to study the influence of the growth conditions on the heat and mass transport and on the stress formation during SiC PVT growth [11,12].…”

Section: Global Modeling Conceptmentioning

confidence: 99%