20 kV, 2 cm&lt;sup&gt;2&lt;/sup&gt;, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Cheng, Lin; Agarwal, Anant; Capell, Craig; O’Loughlin, Michael J.; Brunt, Edward Van; Lam, Khiem; Richmond, Jim; Burk, Albert A.; Palmour, John W.; O'Brien, Heather; Ogunniyi, Aderinto; Scozzie, Charles

doi:10.1109/ppc.2013.6627403

Cited by 36 publications

(23 citation statements)

References 9 publications

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“…Research-level SiC device prototypes with blocking voltage capabilities above 15 kV have been demonstrated using floating field/guard rings (FFR/FGR) [6], [13]- [15], multi-zone (MZ)-JTE [16]- [18], optimized implantationfree (O)-JTE [19], negative bevel based (NB)-JTE [20], [21], and space-modulated (SM)-JTE [7]- [10], [22] termination structures, offering each design concept with its specific set of advantages and disadvantages. The floating guard-ring structure is processed without additional manufacturing steps but requires more than 100 rings for devices with > 10 kV blocking voltage capability [23], [24].…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

“…Further simplifications are provided by negative bevel termination structures (and smoothly tapered structures [31]), which are area-efficient and facilitate low leakage currents. These structures are, however, mainly targeting p-type thyristor structures [20], [21], [32]. Termination structures that combine guard-rings with single/multiple JTE regions (i.e., ring-assisted-JTEs [26], [33], hybrid-JTE [26] SM-JTE [7], [10], multiple-ring-modulated JTE [34], and counter-doped (CD)-JTE [25]) provide high breakdown voltages (i.e., close to ideal VB,PP) in combination with a wide dose margin, yet with a small process increase [25], [26].…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

“…The majority of the JTE structures strives towards the ideal effective charge by employing various patterns of ion implanted guard rings [11], [26], JTE zones [26], [27], or combinations of the two [7], [25], [26], [33], [34]. The same applies for different beveled termination structures [20], [21], [31], [32] and etched-step (ES)-JTE structures [19], [29], [30], [37], [43]- [45], [48].…”

Section: B Single-zone Negative-bevel Jte and Single-zone Etched-step Jte Designs For Ultrahigh-voltage Devicesmentioning

confidence: 99%

See 2 more Smart Citations

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

Section: B Single-zone Negative-bevel Jte and Single-zone Etched-step Jte Designs For Ultrahigh-voltage Devicesmentioning

confidence: 99%

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Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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“…Secondly, SiC has a high thermal conductivity of 3.9 W/cm 2 K as compared to 1.3 W/cm 2 K for GaN at room temperature which is a major benefit to heat dissipation in power devices. [8][9][10][11][12] Despite the limitations of GaN technology, GaN power devices have a major advantage over their SiC counterpart when it comes to electron mobility and high-speed switching capability. A typical SiC metal oxide semiconductor field effect transistor (MOSFET) has a typical channel electron mobility of 28 cm 2 /V s due to surface defects and scattering effects, whereas the 2D electron gas (2DEG) formed in a GaN HEMT has a nominal electron mobility of 2000 cm 2 /V s. [13][14][15][16][17] This significantly higher mobility in a GaN HEMT (almost 70 9 that of a SiC MOSFET) permits high conduction current density through the device for a given active area leading to a much smaller die size.…”

Section: Introductionmentioning

confidence: 99%

Commercial GaN-Based Power Electronic Systems: A Review

Pushpakaran

Subburaj

Bayne

2020

Journal of Elec Materi

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Wide bandgap semiconductor technology is gaining widespread acceptance in the area of high-power and high-temperature power electronics. Gallium nitride (GaN) not only has a wide bandgap of 3.4 eV and all the associated superior electronic properties but also enables the development of high-mobility power devices which is critical in increasing the power density of a power electronics system. Since a commercial GaN power transistor has a lateral structure as opposed to the traditional vertical device structure, commercially available devices are rated below 1000 V breakdown voltage with a maximum value of 900 V and typical value around 650 V. The primary focus of this review will be to introduce readers to the commercially available power electronic systems developed by various manufacturers which employ GaNbased power devices and highlight their remarkable performance which surpasses existing technology. This review also includes a brief introduction on GaN technology followed by current market study showing the roadmap of integration of GaN-based power electronics in the power industry.

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“…SiC MOSFETs have reached 15 kV blocking voltage capability [4]. Bipolar SiC devices have reached beyond 20 kV blocking voltage capability in research laboratories, for example 7-39 kV PiN diodes [5], 27.5 kV integrated-gate bipolar transistors (IGBT) [6], 20 kV gate turn-off thyristors (GTO) [7], and 22 kV Emitter turn-off (ETO) thyristors [8].…”

Section: Introductionmentioning

confidence: 99%

MMC converter cells employing ultrahigh-voltage SiC bipolar power semiconductors

Jacobs

Johannesson

Norrga

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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AcknowledgmentsThe authors would like to acknowledge SweGRIDS for funding this project and ABB Corporate Research Center (SECRC) for their valuable support. AbstractThis paper investigates the benefits of using high-voltage converter cells for transmission applications. These cells employ ultrahigh-voltage SiC bipolar power semiconductors, which are optimized for low conduction losses. The Modular Multilevel Converter with half-bridge cells is used as a test case. The results indicate a reduction of converter volume and complexity, while maintaining low losses and harmonic performance. Ultrahigh-voltage SiC devicesSiC devices with high blocking voltage can replace a stack of devices used in cells with series-connected Si devices. Recent advances in SiC manufacturing technologies have generated state-of-art research

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20 kV, 2 cm<sup>2</sup>, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Cited by 36 publications

References 9 publications

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Commercial GaN-Based Power Electronic Systems: A Review

MMC converter cells employing ultrahigh-voltage SiC bipolar power semiconductors

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