20-Gbit/s ASK wireless system in 300-GHz-band and front-ends with InP MMICs

Hamada, Hiroshi; Kosugi, Toshihiko; Song, Ho-Jin; Matsuzaki, Hiroyuki; Moutaouakil, Amine El; Sugiyama, Hiroki; Yaita, Makoto; Tajima, Tsuyoshi; Nosaka, Hideyuki; Kagami, Osamu; Kawano, Yukio; Takahashi, Tsuyoshi; Nakasha, Yasuhiro; Hara, Naoki; Fujii, Kenichi; Watanabe, Ichiro; Kasamatsu, Akifumi

doi:10.1109/ursiap-rasc.2016.7601303

Cited by 10 publications

(4 citation statements)

References 6 publications

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“…Instead, the cubic mixer with frequency conversion function is adopted to realize the shift of the frequency spectrum, which in turn leads to lower output power and shorter wireless transmission distance. They have further developed a variety of more integrated communication systems along this harmonic mixing idea, and they have been at the international leading level in the field of silicon‐based THz integrated wireless communication [ 132–136 ] . In addition, Nippon Telegraph and Telephone Corporation (NTT) and Tokyo Institute of Technology have also developed a variety of communication systems that can support high‐order modulations with a working frequency around 300 GHz [ 137–145 ] .…”

Section: Silicon‐based Communication Systemmentioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

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With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz (THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology, its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

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Section: Silicon‐based Communication Systemmentioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

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“…These data show that the band gap is tuned from 0.33 eV in bulk to 1.88 eV in bilayer material, giving evidence that the band gap and the high-energy transitions are subjected to extreme changes as nanosheets approach the monolayer thickness. From these results, BP has the potential to offer a new alternative for the design of photocatalysts, solar cells, photodetectors, batteries, transistors as well as the development of novel applications in new fields such the terahertz technology [42][43][44][45][46][47][48][49][50].…”

Section: Optical Absorption: Measurement and Tauc Analysismentioning

confidence: 99%

“…Open Sci. 7: 201210From these results, BP has the potential to offer a new alternative for the design of photocatalysts, solar cells, photodetectors, batteries, transistors as well as the development of novel applications in new fields such the terahertz technology[42][43][44][45][46][47][48][49][50].…”

mentioning

confidence: 99%

Efficient production of few-layer black phosphorus by liquid-phase exfoliation

et al. 2020

Self Cite

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Phosphorene is a new two-dimensional material that has recently attracted much attention owing to its fascinating electrical, optical, thermal and chemical properties. Here, we report on high-quality exfoliation of black phosphorus nanosheets, with controllable size produced in large quantities by liquid-phase exfoliation using N -methyl-2-pyrrolidone (NMP) as a solvent under ambient conditions. The as-synthesized few layers show a great potential for solar energy conversion based on the optical results shown in this work.

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“…Introduction: Developments of various types of integrated circuits in the terahertz frequency range have instigated the construction of high data rate communication systems. Majority of terahertz transceivers introduced up to now use simple on-off keying modulation with the carrier frequencies reaching up to 400 GHz [1]. QPSK receivers, on the other hand, are not as common because their local oscillators are required to lock-in to the incoming carrier signal.…”

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confidence: 99%

300‐GHz integrated heterodyne receiver with carrier lock‐in Costas loop

Choi

Kim

2020

Electron. lett.

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A carrier signal lock-in experiment using a 300-GHz integrated heterodyne circuit is presented. The circuit contains a single voltagecontrolled oscillator with a single set of quadrature mixers that are fabricated using 250-nm InP double hetero-junction bipolar transistor technology. An external feedback loop containing packaged baseband components such as amplifiers, a phase discriminator, and a filter is connected to the integrated circuit to form a complete receiver system. For a −25 dBm of input RF signal with 3.5-GHz single-tone carrier-suppressed modulation, the receiver system responds with successful lock-in range of 110 MHz centred around 311 GHz.

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20-Gbit/s ASK wireless system in 300-GHz-band and front-ends with InP MMICs

Cited by 10 publications

References 6 publications

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Efficient production of few-layer black phosphorus by liquid-phase exfoliation

300‐GHz integrated heterodyne receiver with carrier lock‐in Costas loop

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