20-30 GHz broadband MMIC power amplifiers with compact flat gain PHEMT cells

Sasaki, Y.; Kurusu, H.; Hoshi, H.; Hisaka, T.; Mitsui, Y.

doi:10.1109/mwsym.2001.967076

Cited by 6 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Even if different design strategies are applied, e.g. distributed in [95], three-stage PA adopting single devices in [96] and two-stage balanced in [97], a common feature of these examples in 250 nm GaAs is the limited output power (below 23 dBm), possibly requiring off-chip combining to achieve Watt-level operation. A novel strategy to achieve broadband operation is proposed in [98], where the parasitic drain capacitance of the active devices is absorbed into the output matching/combining network, which also provides some immunity to process variations.…”

Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

View full text Add to dashboard Cite

This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

show abstract

Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

View full text Add to dashboard Cite

show abstract

“…The proposed PA has achieved 22 dBm P-1dB and 30% associated gain with a chip size of 1.5 mm 2 . In [15], the authors have demonstrated the design and test of a K-band GaAs MMIC which delivers a 22 dBm P-1dB and 21% PAE. In order to improve PA's efficiency, harmonic matching method is a key technique which has been used by many researchers.…”

Section: Introductionmentioning

confidence: 99%

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching

Shang¹,

Xu²,

et al. 2016

Active and Passive Electronic Components

View full text Add to dashboard Cite

A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz. A 20 dBm 1 dB-compression-point output power and 40% efficiency are achieved. A novel thermal reliability analysis method based on ICEPAK is proposed also to evaluate its thermal characteristic. The test result by using a QFI InfraScope™infrared imaging system is compared with the simulation result. It agrees well with an accuracy within ±1°C differences, which reflects the advantages of the thermal analysis method with respect to accuracy and convenience for use.

show abstract

“…is mostly used below 50 GHz, serves either as resistive feedback [1]- [2] or feedback in core gain cell [3]. -For 50 GHz and above, cascaded single stage designs can .also achieve wideband performance [4]- [6].…”

mentioning

confidence: 99%

An 18-71 GHz multi-band and high gain GaAs MMIC medium power amplifier for millimeter-wave applications

Wu¹,

Huang²,

Wang³

2003

IEEE MTT-S International Microwave Symposium Digest, 2003

View full text Add to dashboard Cite

Absiracr -This paper presents the deign and measurement results of a broadband high gain MMIC medium power amplifier. The proposed 18-71 GHz multiband amplifier provides a single chip solution for all 28 GHz, 38 CHz, and 60 GHz minimeter-wave applications with a chip size of 2.5 mm x 1 mm. The high gaiu performance of more than 20 dB from 41-63 GHz has been attained. It provides at least 16 dBm of maximum output power from 19-57 GHz. This amplifier consists of one distributed stage for broadband design and cascaded single-ended stages for medium power output. This chip demonstrates the highest frequency application using this combined topology compared with all previously published results. The circuit was fabricated with a 0.15-pm gate-length GaAs-based HEMT MMlC technology. I. INTROOUCTlONIn recent years, there are increasing demands of lowcost MMICs for microwave and millimeter-wave communication systems, such as LMDS (Local Multipoint Distribution Service) at 28 GHz, wireless communication systems at 38 GHz, and future broadband systems at 60 GHz. Therefore, it is desirable to design an amplifier that covers several frequency ranges at a low cost. In this paper, the proposed 18-71 GHz broadband amplifier provides a single chip solution for all abovementioned millimeter-wave frequency bands with a chip size of 2.5 mm x 1 mm. The high gain performance of more than 20 dB from 4 1-63 GHz has been attained. Several techniques have been utilized to realize a broadband MMIC amplifier. Feedback technique, which 41-63> 20 This work

show abstract

20-30 GHz broadband MMIC power amplifiers with compact flat gain PHEMT cells

Cited by 6 publications

References 3 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching

An 18-71 GHz multi-band and high gain GaAs MMIC medium power amplifier for millimeter-wave applications

Contact Info

Product

Resources

About