2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

Abstract

Abstract:The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at −0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon

“…While a number of passive MIR photonic waveguides and devices have been constructed on a variety of silicon waveguide platforms [5][6][7][8], the development of integrated active components on silicon for longer wavelengths has been more limited. Thermo-optic phase shifters for the 5 µm range [9], heterogeneously integrated InP-based type-II photodiodes for wavelengths up to 2.4 µm [10], demultiplexers for the 2 µm range utilizing an array of similar photodiodes [11], a fully integrated spectrometer utilizing an array of InAs 0.91 Sb 0.09 -based photodiodes for 3-4 µm [12], and multiple-quantum-well InGaAs lasers which emit 2.01 µm light in continuous wave (CW) mode at room temperature [13] have been reported.…”

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

“…Therefore, the heterogeneous integration of type-II active devices on SOI is attractive for spectroscopic sensors operating in the 2 μm wavelength range. Type-II InP-based photodiodes were integrated on a silicon waveguide circuit using adhesive bonding technology [89]. The absorbing active region of the photodiodes consists of six periods of a "W"-shaped quantum well as shown in the inset of Figure 26a.…”

III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

“…The III-V epitaxial layer stack, including "W"-shaped quantum well structures, is grown on an InP substrate with a molecular beam epitaxy (MBE) system. The detailed information about the epitaxial structure can be found in [12]. The active region of the photodetector is comprised of six periods of a "W"-shaped quantum well structure, each separated by 9 nm tensile strained GaAsSb layers.…”

“…Compared with the GaSb-based material system, the heterogeneous integration processes for InP-based materials is much more mature resulting in higher device yield and better device performance. Recently, we demonstrated a heterogeneously integrated adiabatically-coupled InP-based type-II photodetector on SOI with a responsivity of 1.2 A/W at a wavelength of 2.32 µm [12]. In this paper, we present 2-μm-wavelength-range SOI AWGs co-integrated with an InP-based type-II quantum well photodetector array.…”