2-inch diameter (1 0 0) β-Ga2O3 crystal growth by the vertical Bridgman technique in a resistance heating furnace in ambient air

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

“…Commonly used growth techniques of bulk β -Ga 2 O 3 crystal are ( Table 1 ): Verneuil method [ 21 , 29 ], Czochralski (CZ) method [ 30 , 31 , 32 , 33 ], floating-zone (FZ) method [ 34 ], edge-defined film fed (EFG) method [ 16 , 17 ], and Bridgman (horizontal or vertical, HB and VB) method [ 35 , 36 ],summarizing the basic features of melt growth methods reported so far.…”

“…Additionally, this crucible also facilitates the pulling-up process as the grown crystal does not adhere to the wall. The major residual impurities are generally Rh (~several tens wt.ppm) from the crucible, Sn and Si (~several wt.ppm) from raw materials, and Fe and Zr (~several wt.ppm) from the furnace [ 36 , 48 ].This technique recently became n -type doping available by using a resistance heating VB furnace, and electron concentration and electron mobility were determined to be 3.6 × 10 18 cm −3 and 60 cm 2 V −1 s −1 , respectively, by 0.1 mol% Sn-doped [ 35 , 48 ]. As the CZ, EFG, and VB method use the crucible, they all have a high level of scalability.…”

Controllability of β-Ga2O3 single crystal conductivity by V doping

“…15,21,22 2 inch diameter (100) β-Ga 2 O 3 and 1 inch β-Ga 2 O 3 crystals with different orientations were grown by VB. 23,24 The largest β-Ga 2 O 3 bulk crystal (6 inch) was obtained using the EFG method. 25 In the FZ method, crystals growing in different directions and 1 inch crystal have been demonstrated.…”

Thermophysical properties of molten Ga2O3 by using the electrostatic levitation furnace in the International Space Station

“…Furthermore, since bulk single crystals of β-Ga 2 O 3 can be grown from the melt, β-Ga 2 O 3 has significant advantages over other wide bandgap semiconductor materials (SiC and GaN) in terms of its substrate quality and cost. Growth of its bulk single crystals with different doping species and crystal orientations has so far been demonstrated by using various kinds of melt growth techniques such as the Czochralski (CZ), [8][9][10][11] the edge-defined film-fed growth (EFG), 12,13) the vertical Bridgeman (VB), [14][15][16][17] and the optical floating zone (OFZ) methods. 18,19) In particular, the EFG method is technically mature and 4 inch substrates grown by the EFG method have already been commercially available.…”