2013 Proceedings of the ESSCIRC (ESSCIRC) 2013
DOI: 10.1109/esscirc.2013.6649130
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2×(4×)128 time-gated CMOS single photon avalanche diode line detector with 100 ps resolution for Raman spectroscopy

Abstract: A 2x(4x)128 multiphase time-gated single photon avalanche diode (SPAD) line detector has been designed and fabricated in a high voltage 0.35 µm CMOS technology for Raman spectroscopy. The time positions of the photons can be measured with the resolution of 100 ps using four time gates over the whole line detector simultaneously. This approach enables to reduce the fluorescence background of the Raman spectrum markedly. Measurements showed that the time gates can be distributed over the whole line detector with… Show more

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Cited by 11 publications
(17 citation statements)
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References 7 publications
(10 reference statements)
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“…A different approach was chosen in [126,130,131], where a 2×(4)×128 SPAD array, again in a standard 0.35 µm CMOS process, featured 4 sub-ns time gates during which the on-chip electronics counts the number of detected photons. This architecture also allowed to determine, in addition to the Raman signal, the level of the residual fluorescence and DCR.…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…A different approach was chosen in [126,130,131], where a 2×(4)×128 SPAD array, again in a standard 0.35 µm CMOS process, featured 4 sub-ns time gates during which the on-chip electronics counts the number of detected photons. This architecture also allowed to determine, in addition to the Raman signal, the level of the residual fluorescence and DCR.…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…CMOS technologies also enable one to construct 2-D detector arrays, which opens up a possibility for manufacturing time-gated Raman spectroscopy devices for use in out-oflaboratory applications. Time-gated SPAD arrays having time gates from 700 ps to shorter than 100 ps have already been published, for example, and are demonstrated in references [9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…For example, CMOS technologies can be used to manufacture SPAD arrays for fluorescence lifetime imaging microscopy (FLIM) [4], positron emission tomography [5], time-of-flight (TOF) laser range imaging [6] and time-gated Raman spectroscopy applications [7,8]. These applications need a compact, cheap detector array with time resolving electronics.…”
Section: Introductionmentioning
confidence: 99%