2.5-THz frequency difference measurements in the visible using metal-insulator-metal diodes

Drullinger, R. E.; Evenson, K. M.; Jennings, D. A.; Petersen, F. R.; Bergquist, J. C.; Burkins, Lee; Daniel, H. U.

doi:10.1063/1.93852

Cited by 49 publications

(8 citation statements)

References 10 publications

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“…The generation mechanism, on the other hand, seems limited by electron-phonon relaxation to several hundreds of gigahertz, easily accessible by light modulation through interference. 36 The usage of other phonon detection techniques, such as bolometers or superconducting tunnel junctions, [37][38][39] could therefore markedly extend the useful frequency range.…”

Section: Discussionmentioning

confidence: 99%

Generation and propagation of coherent phonon beams

et al. 2001

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Narrow coherent beams of longitudinal acoustic waves are injected into a single crystal of PbMoO 4 at gigahertz frequencies, and their properties are observed by means of Brillouin scattering. The waves are generated via the thermoelastic strain that results from periodic surface heating of a thin metallic transducer by interfering cw dye lasers. Frequency tuning is achieved simply by varying the optical difference frequency. A theoretical description based on heat diffusion and thermoelastic expansion agrees with the observed frequency dependence of the acoustic intensity, inclusive of acoustic resonances within the transducer, as well as its quadratic dependence on the laser power. The propagation of the acoustic beams is found to be governed by Fresnel diffraction provided due account is taken of phonon focusing. The beam furthermore is responsive to the phase profile over the laser-illuminated area, which allows us to manipulate the beam in various ways, such as modifying its divergence as if an acoustic lens were positioned just below the transducer or sweeping the beam sideward by a moving grating. Combined with Brillouin detection, distinguishing between phase and group velocities, this provides a direct measurement of phonon focusing. Finally, the decay of the acoustic beam with the distance is measured at various frequencies, to find confirmation of Herring's asymptotic theory for anharmonic phonon decay in anisotropic crystals.

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Section: Discussionmentioning

confidence: 99%

Generation and propagation of coherent phonon beams

et al. 2001

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“…etal-insulator-metal (MIM) diodes have attracted much attention in recent years because of the possibility of operating at very high frequencies, well into the terahertz range, a promise first highlighted over thirty years ago [1], [2]. The MIM diode is a quantum device wherein a thin dielectric is sandwiched between two metal electrodes with dissimilar work functions, which cause an asymmetric electric current to flow through the dielectric with respect to the polarity of the electrodes.…”

Section: Introductionmentioning

confidence: 99%

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Etor

Dodd

Wood

et al. 2016

IEEE Trans. Electron Devices

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Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) <1  Abstract-The design and fabrication metal-insulator-metal (MIM) diodes using an ultra-thin organic insulator is presented. The insulating layer was found to be compact, highly conformal, and uniform, effectively overcoming the main design challenge in MIM diodes. The diodes have strong non-linear current-voltage characteristics with a typical zero-bias curvature coefficient 5.4 V -1 and a voltage responsivity of 1.9 kV/W at a frequency of 1 GHz. The fabrication of the diodes only requires lowtemperature processing, is cost effective, and can potentially be ported to large-area roll-to-roll manufacturing.Index Terms-Metal-insulator-metal diodes, microwave diode, molecular electronics, octadecyltrichlorosilane.

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“…Finally, extrinsic photoconductors such as doped Ge detectors are fast and sensitive, but they must be cooled to 4 K. Quite generally, coherent techniques profit from a good sensitivity, but they are experimentally more sophisticated than incoherent ones. 10 Although semiconductor quantum devices might not be highly sensitive, their potential for mass fabrication and integration by means of semiconductor device technology is very appealing. This has been proven by different types of quantum well infrared photodetectors ͑QWIPs͒ which work in a variety of different wavelength ranges.…”

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confidence: 99%

Terahertz range quantum well infrared photodetector

Graf¹,

Scalari²,

Hofstetter³

et al. 2004

Applied Physics Letters

200

119

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We demonstrated a GaAs/AlGaAs-based far-infrared quantum well infrared photodetector at a wavelength of ϭ84 m. The relevant intersubband transition is slightly diagonal with a dipole matrix element of 3.0 nm. At 10 K, a responsivity of 8.6 mA/W and a detectivity of 5ϫ10 7 cm ͱHz/W have been achieved; and successful detection up to a device temperature of 50 K has been observed. Being designed for zero bias operation, this device profits from a relatively low dark current and a good noise behavior.In recent years, there has been an increasing interest in the fabrication of so-called terahertz ͑THz͒ emitters and detectors. While electronic devices like Gunn diodes or Schottky diode frequency multipliers try to reach this range from the low frequency end, optical devices like gas or semiconductor lasers are quickly moving into the THz range from the high frequency side. [1][2][3] Since the THz region is traditionally defined as 0.1-3 THz, the currently available quantum cascade laser ͑QCL͒ sources with ϭ87 m can already be regarded as THz sources. At low temperatures, they emit several milliwatts of continuous wave output power. On the electronics side, Gunn diodes and frequency mixers have also achieved several milliwatts of radiated power at frequencies on the order of hundreds of gigahertz. 4 Once the entire THz frequency range is fully accessible by convenient radiation sources, it is obvious that the next important step towards applications is the development of suitable detectors. Like any other type of electromagnetic radiation, THz waves or pulses can be detected by coherent or incoherent means. Most coherent detection schemes utilize frequency conversion, whereas incoherent methods are based on the heat production of absorbed radiation. Typical examples of heat detectors include Si-bolometers or pyroelectric crystals like deuterated triglycerine-sulfate ͑DTGS͒; on the other hand, Schottky diode mixers, 5 nonlinear optical crystals like ͕110͖ ZnTe, 6 and gated photoconductive antennas are typical coherent detection schemes. 7 As a further incoherent solution, semiconductor-based quantum-type approaches like biased superlattices have attracted some attention.8 Bolometers are in general highly sensitive, but like all heat-based detection schemes, they are intrinsically slow and built for very low temperature operation only.9 DTGS detectors and pyroelectric crystals offer the advantage of faster detection at the prize of reduced sensitivity. Finally, extrinsic photoconductors such as doped Ge detectors are fast and sensitive, but they must be cooled to 4 K. Quite generally, coherent techniques profit from a good sensitivity, but they are experimentally more sophisticated than incoherent ones.10 Although semiconductor quantum devices might not be highly sensitive, their potential for mass fabrication and integration by means of semiconductor device technology is very appealing. This has been proven by different types of quantum well infrared photodetectors ͑QWIPs͒ which work in a variety of different wavelength...

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2.5-THz frequency difference measurements in the visible using metal-insulator-metal diodes

Cited by 49 publications

References 10 publications

Generation and propagation of coherent phonon beams

Generation and propagation of coherent phonon beams

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Terahertz range quantum well infrared photodetector

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