2.45-GHz CMOS Reflection-Type Phase-Shifter MMICs With Minimal Loss Variation Over Quadrants of Phase-Shift Range

Wu, Jen-Chieh; Chin, Ting-Yueh; Chang, Sheng-Fuh; Chang, Chia-Chan

doi:10.1109/tmtt.2008.2003527

Cited by 56 publications

(1 citation statement)

References 26 publications

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“…Ellinger [3] has provided a significant investigation into extending the phase tuning range. One technique is to use a series resonator formed by a varactor and an inductor as the reflective-type load to achieve a larger phase tuning range due to its higher-order feature [3,4]. However, the large parasitic junction capacitance of varactors is always the key constraint, which greatly degrades the phase shifters tuning range.…”

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confidence: 99%

10 GHz CMOS hybrid reflective‐type phase shifter with enhanced phase shifting range

Li¹,

Shu²,

Gu³

2015

Electron. lett.

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A new idea is presented to boost the phase shifting range of a reflective-type phase shifter (RTPS) by leveraging the parasitic capacitance; however, without any cost or design overhead. In contrast to the conventional RTPS, where the parasitic capacitance degrades the phase shifting range, a simple position interchange of electronic components leads to an enlarged tuning range. This mechanism is analysed thoroughly and validated by simulation and measurement results. Two RTPSs with different component positions are fabricated in a 65 nm CMOS technology. Grounding inductors leads to a more than 30°phase shifting range than the conventional ones without this arrangement. The S 11 is measured at <−10 dB from 9 to 10.75 GHz and the S 21 is −6 dB with <0.6 dB variations at 10.2 GHz. This technique also provides design insights for phase shifting and tuning range enhancement of general resonant networks.

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confidence: 99%

10 GHz CMOS hybrid reflective‐type phase shifter with enhanced phase shifting range

Li¹,

Shu²,

Gu³

2015

Electron. lett.

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Non‐Periodic Synthesized Transmission Lines for Circuit Miniaturization

Ma¹,

Wang²,

Lai³

et al. 2016

Synthesized Transmission Lines

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Low‐loss 7‐bit S‐band CMOS passive phase shifter with digital control

Kumar

Garg

Selvaraja

et al. 2019

Circuit Theory & Apps

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Summary This paper presents the design and implementation of a 7‐bit S‐band digital passive phase shifter using Complementary Metal‐Oxide‐Semiconductor (CMOS) 65‐nm technology in 2.6‐ to 3.2‐GHz frequency band. New switched delay network topology has been used for 5.625° and 2.8°, and modified switched filter topology has been used for implementation of other phase bits to achieve 7‐bit performance with low insertion loss and better isolation. The measured results of the fabricated chip show 7‐bit performance with an average insertion loss of 11 dB, average root mean square (RMS) phase error of less than 2.0°, average RMS amplitude error of less than 0.6 dB, input matching (S11) better than −7.5 dB, and output matching (S22) better than −14.5 dB across the target frequency band at 50Ω input/output impedance.

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2.45-GHz CMOS Reflection-Type Phase-Shifter MMICs With Minimal Loss Variation Over Quadrants of Phase-Shift Range

Cited by 56 publications

References 26 publications

10 GHz CMOS hybrid reflective‐type phase shifter with enhanced phase shifting range

10 GHz CMOS hybrid reflective‐type phase shifter with enhanced phase shifting range

Non‐Periodic Synthesized Transmission Lines for Circuit Miniaturization

Low‐loss 7‐bit S‐band CMOS passive phase shifter with digital control

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