2-26 GHz MMIC frequency converter

Titus, W.; Miller, M.E.

doi:10.1109/gaas.1988.11053

Cited by 10 publications

(2 citation statements)

References 3 publications

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“…However, the performances of the conventional distributed amplifier (CDA) are gain-bandwidth limited due to its optimum number of stages [2]. The cascode configuration (a common-source field-effect transistor (FET) connected with a common-gate FET) DA, known for its high maximum available gain, wide bandwidth, improved input-output isolation, and variable gain control capability, has been utilized in many applications such as distributed mixers [18]- [20], and DAs [3], [4], [8], [10]. To make a very compact monolithic microwave integrated circuit (MMIC) DA design possible, the cascode FET gain cell are sometimes realized as a dual-gate structure.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages

Deng

Huang

Wang

2003

IEEE Trans. Microwave Theory Techn.

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Using the concept of traveling-wave gain stages, novel GaAs pseudomorphic high electron-mobility transistor monolithic-microwave integrated-circuit (MMIC) distributed amplifiers (DAs) are demonstrated to achieve high gain and over several octaves of bandwidth performance simultaneously for microwave and millimeter-wave frequency applications. The cascaded single-stage distributed amplifier (CSSDA) is used as traveling-wave gain stages to improve the gain performance of the conventional distributed amplifier (CDA). By adopting the low-pass filter topology between the CDA and CSSDA and tuning the gain shape of CDA and CSSDA separately, a broad-band and high-gain DA, called CDA-CSSDA-2, was accomplished. The detailed design equations are derived for the broad-band matching design of this CDA-CSSDA-2. Two other MMICs, namely, a two-stage CSSDA called 2-CSSDA, and another twostage design called CDA-CSSDA-1, are also included in this paper. This CDA-CSSDA-2 achieves 22 1.5-dB small-signal gain from 0.1 to 40 GHz with a chip size of 1.5 2 mm 2. It also produces a gain-bandwidth product of 503 GHz, which is the highest among all reported GaAs-based DAs. The flat group delay also demonstrates the feasibility of this design for future digital optical communications and broad-band pulse applications. Index Terms-Broad-band, cascaded single-stage distributed amplifier (CSSDA), conventional distributed amplifier (CDA), distributed amplifier (DA), monolithic microwave integrated circuit (MMIC), traveling-wave gain stage.

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Section: Introductionmentioning

confidence: 99%

Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages

Deng

Huang

Wang

2003

IEEE Trans. Microwave Theory Techn.

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“…The distributed mixers can be implemented using either single FETs [5]- [7], [13], or dual-gate or cascode FETs [4], [8]- [12]. The use of dual-gate or cascode FETs as the mixing devices in distributed mixer circuits provides inherently good isolation between LO and RF signals when they are applied to the separate gates.…”

Section: Introductionmentioning

confidence: 99%

A 3-33 GHz PHEMT MMIC distributed drain mixer

Deng

Wang

2002

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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A compact wide-band GaAs PHEMT MMIC distributed drain mixer covering the RF frequency from 3 to 33 GHz is reported in this paper. The measured results show that the conversion loss of the distributed drain mixer is better than 4 dB over the frequency range at LO power 13 dBm without IF amplification. Using the matching circuit in the output of the FETs, the LO-to-IF and LO-to-RF isolations are better than 19 dB from 3 to 33 GHz. This mixer utilized a simple distributed topology with single-gate HEMTs and achieved a very broad band performance comparable to the caseode or dual-gate distributed mixers. The overall chip size of this MMIC is only 1.7 x 1 mm2.

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