Lossless broad-band monolithic microwave active inductors

Hara, Shinsuke; Tokumitsu, T.; Aikawa, Masanori

doi:10.1109/22.44111

Cited by 104 publications

(26 citation statements)

References 4 publications

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“…Their idea is to use a single transistor with reactive feedback to produce inductive output. The new possibilities of MMIC integration has brought up the idea again in the late 1980s when extensive work for developing high-performance integrated active inductors was made by Hara et al [2]. Their second generation topology shown in Figure 1 (a) has proved to have a good performance: that is, reasonably high inductance and negligible series resistance, as shown in Figure 3(a).…”

Section: Introductionmentioning

confidence: 95%

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Active inductors for GaAs and bipolar technologies

Kaunisto¹,

Alinikula²,

Stadius³

1995

Analog Integr Circ Sig Process

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Abstract. Integrated high performance gallium arsenide and silicon active inductor configurations for microwave frequencies are examined in this article. The existing topologies are considered and a new aspect of comparing the performance of different topologies based on a more complete analysis is utilised. Drawbacks of GaAs technology in this particular case are recognised, while benefits attained by using bipolar technology are presented. A theoretical basis for designing bipolar inductors is examined. On the basis of these studies a new method for raising the Q-factor of an active inductor is found and applied to two novel GaAs Q-enhanced active inductors. New applications for active high-Q resonators are found and their realisation aspects are considered. Integrated test circuits have been designed, and the simulated and experimental results are presented.

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Section: Introductionmentioning

confidence: 95%

“…Conclusions favouring bipolar technology are drawn and some further modifications to the circuit of Hara et al [2] are made.…”

Section: Introductionmentioning

confidence: 99%

Active inductors for GaAs and bipolar technologies

Kaunisto¹,

Alinikula²,

Stadius³

1995

Analog Integr Circ Sig Process

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“…Though, realization of negative resistance via active feedback technique is useful to design high Q planar inductor, the question of area reduction remains. The active inductor philosophy [27] can suitably solve the twofold problems: in a way, the required area is drastically reduced; on the other hand, standard low-cost technology can be used with confidence and high Qvalue (more than 100) can be easily obtained by controlling the associated losses via negative resistance feedback technique [28,29]. However, along with the earlier advantages, there is a drawback of poor noise performance [30,31].…”

Section: Introductionmentioning

confidence: 99%

Design of active inductors in SiGe/SiGe:C processes for RF applications

Chakravorty

Scholz

Senapati

et al. 2007

Int J RF and Microwave Comp Aid Eng

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Applicability of silicon-based heterojunction bipolar processes is investigated for designing active inductors with high quality factors (Q). Results for grounded type oneport active inductor incorporating frequency-dependent as well as frequency-independent negative resistances are examined. Later, the negative resistance aspect is extended from one-port to two-port active inductor circuit to ensure its use as a series element. The enhanced Q-values of all the inductive circuits are observed in accordance with the theory. Moderately high-Q values (∼100) with considerable inductances (∼0.2-1 nH) are obtained in the RF frequency ranges (∼5-9 GHz).

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“…The others have been constructed at the transistor level basis e.g. those proposed in [4][5][6] for GaAs Technology and in [7][8] for CMOS technology etc. It can be seen that the OTA which is an often cited active element can be used as the basis active elements for the network level based active inductors entitled the OTA-based inductor which can be both grounded and floating topologies.…”

Section: Introductionmentioning

confidence: 99%

Stochastic inductance model of OTA-based inductor

Banchuin

Chaisrichatorn

Chipipop

2009

2009 IEEE 8th International Conference on ASIC

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In this research, the effect of the stochastic nature ofthe bias current to the inductance of the OTA-based inductor has been explored and modeled as the corresponding Probability Density Function, PDF which the complete probabilistic distribution information can be obtained. This research has been performed based upon CMOS technology. The derived model has been found to provide a sufficient accuracy due to the strong agreement between its corresponding calculated Cumulative Distribution Function, CDF and the measured one. The proposed model is promisingly applicable to the OTA-based inductor of any topologies constructed with any basis OTA. Hence, it has been found to be a convenience tool for the design of various applications of the OTA-based inductor. Furthermore, the conceptual idea behind this research is also applicable to any current controlled active inductor.Index Terms -About four key words or phrases in order of importance, separated by commas.

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Lossless broad-band monolithic microwave active inductors

Cited by 104 publications

References 4 publications

Active inductors for GaAs and bipolar technologies

Active inductors for GaAs and bipolar technologies

Design of active inductors in SiGe/SiGe:C processes for RF applications

Stochastic inductance model of OTA-based inductor

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