2,2,4,4,6,6-Hexabenzylcyclotristannatellurane, (Bn₂SnTe)₃. Synthesis and Structural Characterization of an Organometallic Single-Source Precursor to Phase-Pure, Polycrystalline SnTe

Abstract

The title compound, (Bn2SnTe)3, Bn = CH2C6H5, was prepared in high yield by treating Bn2SnCl2 with (NH4)2Te. Details of the synthesis and characterization (1H, 13C, 119Sn, and 125Te NMR; IR, single-crystal XRD, and elemental analyses) are presented. (Bn2SnTe)3 serves as an efficient single-source precursor to phase-pure cubic SnTe under mild conditions

Synthesis of type II/type I CdTe/CdS/ZnS quantum dots and their use in cellular imaging

“…A stock solution of (NH 4 ) 2 Te (assigned as 0.16 M) was prepared as described by Boudjouk et al 22 In a typical reaction 60 mL deionised water were purged with nitrogen gas for 45 min. To this were added tellurium powder (1.30 g, 0.01 M) and aluminium powder (0.77 g, 0.028 M) which was stirred under nitrogen for 1 h. Ammonium hydroxide (14 mL of a 5 N solution) was then added and allowed to stir for one day, then filtered via cannula and stored indefinitely under an inert atmosphere.…”

Non-monotonic pressure dependence of band gap in SnTe

“…Tin telluride (SnTe) is an important narrow band gap semiconductor with many unique properties [1][2][3][4], and can be adjusted through doping and alloying easily [5][6][7][8]. Recently, topological classification of quantum matter has been extended to a new class of matter, namely, topological crystalline insulators (TCI) [9].…”

Complete Chalcogenation of Tin(II) Centers in an Imidotin Cluster

“…In the latter category the design of suitable precursors for the low bandgap semiconductors SnE (E = Se, Te), which have applications in thermoelectric devices and for optoelectronic materials, is of current interest. [4,5] Suitably chosen complexes containing terminal Sn = E bonds would appear to be candidates for this purpose.[6] In particular, imidotin chalcogenides of the type [(ESnm 3 -NR) 4 ] (E = Se, Te) may act as singlesource precursors of these binary semiconductors by the energetically favorable elimination of the diazene RN = NR. However, investigations of the reactions of the neutral cluster 4 ] with chalcogens have revealed that oxidation is limited to one tin(ii) center for E = Te (A) or two tin(ii) centers in the case of E = Se (B).…”