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Schdppen, A.; Vescan, L.; Werres, C.; Beneking, H.

doi:10.1007/978-3-642-52314-4_123

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2001

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“…f T /f max = 97/94GHz, represents a new record for NSEG-based HBT technologies. This result should be compared to the 90/72GHz or 48/105GHz achieved at IBM [7,8], or the 75/80GHz announced by TEMIC [9], both using sophisticated self-aligned structures. It also significantly outperforms the 48/100GHz or 55/90GHz results obtained at IHP using a SiGe:C base, but non optimized isolation and collector structures [3,5].…”

Section: Discussionmentioning

confidence: 86%

100GHz SiGe:C HBTs using non selective base epitaxy

Martinet

Baudry

Kermarrec

et al. 2001

31st European Solid-State Device Research Conference

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We report the fabrication and electrical characterization of high performance 0.25µm SiGe HBTs incorporating a carbon-doped base grown using non selective epitaxy. A transit frequency f T of 97GHz and a maximum oscillation frequency f max of 94GHz have been obtained together with well balanced static parameters. These are the highest frequency performances reported to date for non selective epitaxy SiGe HBTs, including carbon-doped base devices.

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Section: Discussionmentioning

confidence: 86%