1X nm Copper and Low-k reliability

Tőkei, Zsolt; Croes, Kristof

doi:10.7567/ssdm.2011.c-4-1

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2012

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“…Therefore, the resistance allows estimating the equivalent rectangular Cu section of the wires if the Cu resistivity of the wires in function of the crosssection area is known. This relationship has been obtained by analytical fitting of experimental resistivity data [4], [5]. The estimated final height, width, space and shape of the wire section are geometrically reconstructed by the measured aspect ratio AR, the tapering angle θ, the pitch and the Cu barrier thickness t b .…”

Section: Interconnect Modelingmentioning

confidence: 99%

Impact of advanced patterning options, 193nm and EUV, on local interconnect performance

Stucchi

Tőkei

Demuynck

et al. 2012

2012 IEEE International Interconnect Technology Conference

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The aim of this paper is to predict the performance of local interconnects, manufactured by advanced patterning options as double patterning and EUV lithography. Electrical wire parameters as resistance, capacitance, RC delay and coupling between adjacent wires are extracted by simulation from scaled 2-D interconnect models, calibrated with dimensions and electrical parameters measured on simple test structures. CD and overlay variations of each patterning option are estimated from experimental and ITRS data and are included in the models. The extracted wire parameters allow the comparison between the patterning options and indicate the optimal choice for the next technology nodes.

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Section: Interconnect Modelingmentioning

confidence: 99%