193-nm resist roughness characterization and process propagation investigation using a CD-SEM

Impact of averaging of CD-SEM measurements on process stability in a full volume DRAM production environment

“…This better process control is mainly the result of averaging over nearest neighbors and therefore excluding most of the random process variations of individual features. Examples for random CD fluctuations are local footing and rounding of resist structures, variations in the taper angle after etch, line edge roughness and line width roughness [6,7].…”

A review of line edge roughness and surface nanotexture resulting from patterning processes

“…This is true for transistor gate roughness which does not scale with the critical dimension of the transistor [2][3][4][5]. It is important for the electrical characteristics of transistors [2][3][4][6][7][8][9][10][11], the capacitance of thin insulating films [12], the light scattering in optoelectronic devices [13], the flow in microchannels [14], the adsorption of proteins on surfaces [15,16], the wettability [17] of surfaces and many other applications.…”

Θεωρητική Και Πειραματική Μελέτη Φυσικοχημικών Ιδιοτήτων Λεπτών Υμενίων Με Εφαρμογές Στη Νανολιθογραφία

“…Αυτό επιβεβαιώθηκε αργότερα από πιο εκτεταμένες μελέτες όπως (π.χ.) αυτές των Marschner et al (Marschner, et al 2004) και των Constantoudis et al (Constantoudis, et al 2005). Όπως φαίνεται από την αντίστοιχη, απλοποιημένη εκδοχή της εξίσωσης 5.3, οι τιμές των LER και του LWR είναι ανάλογες μεταξύ τους:…”