19 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu_2O_3 ceramic

Morris, James M.; Stevenson, N. K.; Bookey, Henry T.; Kar, A. K.; Brown, C.T.A.; Hopkins, James F.; Dawson, Martin D.; Lagatsky, A.A.

doi:10.1364/oe.25.014910

Cited by 40 publications

(12 citation statements)

References 23 publications

(26 reference statements)

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“…Further power scaling was limited by the available pump power. Note that for most of the previously studied fs-DLW Tm WG lasers [34][35][36][37][38], Ti:Sapphire was used as a pump source. For further power scaling and for potential applications, it is desirable to fabricate WGs suitable for diode-pumping (e.g., by fiber-coupled AlGaAs laser diodes).…”

Section: Passively Q-switched Lasermentioning

confidence: 99%

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS₂

et al. 2019

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We report the generation of mid-infrared (~2 µm) high repetition rate (MHz) sub-100 ns pulses in buried thulium-doped monoclinic double tungstate crystalline waveguide lasers using two-dimensional saturable absorber materials, graphene and MoS 2 . The waveguide (propagation losses of ~1 dB/cm) was micro-fabricated by means of ultrafast femtosecond laser writing. In the continuous-wave regime, the waveguide laser generated 247 mW at 1849.6 nm with a slope efficiency of 48.7%. The laser operated at the fundamental transverse mode with a linearly polarized output. With graphene as a saturable absorber, the pulse characteristics were 88 ns / 18 nJ (duration / energy) at a repetition rate of 1.39 MHz. Even shorter pulses of 66 ns were achieved with MoS 2 . Graphene and MoS 2 are therefore promising for high repetition rate nanosecond Q-switched infrared waveguide lasers. IntroductionWaveguide (WG) lasers emitting in the spectral range of ~2 μm are of interest for spectroscopy, telecom and environmental sensing applications [1]. This is because their emission is eye-safe and matches the absorption lines of various atmospheric and biomolecules. The laser operation at ~2 μm is achieved using such trivalent rare-earth ions as Thulium (Tm 3+ ) or Holmium (Ho 3+ ). In the former case, the transition of interest is 3 F 4 → 3 H 6 . Due to the large Stark splitting of the Tm 3+ ground-state, its emission is wavelength-tunable. The Tm 3+ ions feature strong absorption at ~0.8 μm ( 3 H 6 → 3 H 4 transition) allowing for their efficient pumping by AlGaAs laser diodes and Ti:Sapphire lasers. Moreover, the crossrelaxation for adjacent Tm 3+ ions, 3 H 4 + 3 H 6 → 3 F 4 + 3 F 4 , can potentially raise the pump quantum efficiency up to 2.Efficient continuous-wave (CW) thulium WG lasers are known [2,3]. Several methods have been used to fabricate WGs based on Tm 3+ -doped materials, e.g., liquid phase epitaxy (LPE) in combination with ion beam etching [2], optical bonding [4], ion diffusion [5], reactive co-sputtering [6] and femtosecond direct laser writing (fs-DLW) also referred as ultrafast laser inscription (ULI) [7]. In the latter approach, the output of an ultrafast (fs) An overview of PQS thulium WG lasers reported to date is presented in Table 1. Regarding planar WG lasers produced by LPE, a "slow" SA (Cr 2+ :ZnS) was employed in a Tm:KY(WO 4 ) 2 laser yielding 1.2 μs / 0.12 μJ (duration / energy) pulses at a low repetition rate of 10 kHz [24]. The use of a "fast" SWCNT-based SA in a similar laser lead to much shorter pulses of 83 ns / 33 nJ at 1.39 MHz [25]. However, both these lasers generated spatially multimode output.

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Section: Passively Q-switched Lasermentioning

confidence: 99%

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS₂

et al. 2019

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“…The WG propagation loss was estimated from a Caird analysis modified for high output coupling [17], 1∕η 1∕η 0 1 2γ∕γ OC , where γ − ln1 − L and γ OC − ln1 − T OC , L is an internal loss per pass, and η 0 is an intrinsic slope efficiency. Figure 9 shows a plot of the inverse of the slope efficiency versus the inverse of the outcoupling loss γ OC for both WGs.…”

Section: A Cw Operationmentioning

confidence: 99%

“…It can be applied to a variety of glass and crystalline materials. To date, several studies have been dedicated to CW fs-DLW Tm WG lasers [12][13][14][15][16][17]. One can note the results achieved in Ref.…”

Section: Introductionmentioning

confidence: 97%

Passively Q-switched femtosecond-laser-written thulium waveguide laser based on evanescent field interaction with carbon nanotubes

et al. 2018

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Surface channel waveguides (WGs) were fabricated in a monoclinic Tm 3 :KLuWO 4 2 crystal by femtosecond direct laser writing (fs-DLW). The WGs consisted of a half-ring cladding with diameters of 50 and 60 μm located just beneath the crystal surface. They were characterized by confocal laser microscopy and μ-Raman spectroscopy, indicating a reduced crystallinity and stress-induced birefringence of the WG cladding. In continuous-wave (CW) mode, under Ti:sapphire laser pumping at 802 nm, the maximum output power reached 171.1 mW at 1847.4 nm, corresponding to a slope efficiency η of 37.8% for the 60 μm diameter WG. The WG propagation loss was 0.7 0.3 dB∕cm. The top surface of the WGs was spin-coated by a polymethyl methacrylate film containing randomly oriented (spaghetti-like) arc-discharge single-walled carbon nanotubes serving as a saturable absorber based on evanescent field coupling. Stable passively Q-switched (PQS) operation was achieved. The PQS 60 μm diameter WG laser generated a record output power of 150 mW at 1846.8 nm with η 34.6%. The conversion efficiency with respect to the CW mode was 87.6%. The best pulse characteristics (energy/duration) were 105.6 nJ/98 ns at a repetition rate of 1.42 MHz.

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“…It has been shown in other studies that transitions from Type I to Type II guiding are possible above a pulse energy threshold [16]. Modification lines were written at a depth of ~250 μm below the sample surface to avoid surface ablation during writing and with consideration of the working distance of the objective and the sample thickness.…”

Section: Waveguide Fabrication and Characterizationmentioning

confidence: 99%

Ge₂₂As₂₀Se₅₈ glass ultrafast laser inscribed waveguides for mid-IR integrated optics

Morris¹,

Mackenzie²,

Petersen³

et al. 2018

Opt. Mater. Express

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19 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu_2O_3 ceramic

Cited by 40 publications

References 23 publications

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS₂

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS₂

Passively Q-switched femtosecond-laser-written thulium waveguide laser based on evanescent field interaction with carbon nanotubes

Ge₂₂As₂₀Se₅₈ glass ultrafast laser inscribed waveguides for mid-IR integrated optics

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19 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu_2O_3 ceramic

Cited by 40 publications

References 23 publications

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS2

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS2

Passively Q-switched femtosecond-laser-written thulium waveguide laser based on evanescent field interaction with carbon nanotubes

Ge22As20Se58 glass ultrafast laser inscribed waveguides for mid-IR integrated optics

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Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS₂

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS₂

Ge₂₂As₂₀Se₅₈ glass ultrafast laser inscribed waveguides for mid-IR integrated optics