19.3% Efficiency on P-Type Silicon Solar Cells by Pulsion® Plasma-Immersion Implantation

Perchec, Jérôme Le; Lanterne, Adeline; Michel, Thomas; Gall, S.; Monna, R.; Torregrosa, Frank; Roux, Laurent

doi:10.1016/j.egypro.2013.05.035

Cited by 11 publications

(7 citation statements)

References 5 publications

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“…The technology to transfer ion implantation into photovoltaic industry will be most likely based on Plasma Immersion Ion Implantation (PIII) [12]. In that case, the whole spectrum of ion species present in the plasma of the ion source will be implanted.…”

Section: Introductionmentioning

confidence: 99%

Ion implantation of boric molecules for silicon solar cells

Krügener

Peibst

Bugiel

et al. 2015

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 99%

Ion implantation of boric molecules for silicon solar cells

Krügener

Peibst

Bugiel

et al. 2015

Solar Energy Materials and Solar Cells

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“…Phosphorus implantation by PIII technique has already shown good results on p-type silicon solar cells with an efficiency improvement of 0.7% only replacing POCh diffusion by PR3 implantation [19].…”

Section: B Bsf Fabricationmentioning

confidence: 99%

New processes for homojunction silicon solar cells doping: From beam line to plasma immersion ion implantation

Coig

Milési

Lerat

et al. 2016

2016 16th International Workshop on Junction Technology (IWJT)

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The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially, we evaluated the benefits of beamline ion implantation in replacement of diffusion anneal doping process. Two different annealing routines were studied. The first one using a single annealing to activate both B implanted emitter and P implanted BSF, while the second one used two different annealing to separately activate each dopant. Good yield was reached with a re cord cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation where the final objective was the fabrication of a solar cell fully doped by plasma. BF 3 and B2R6 were compared as precursor gases for the boron emitter doping, while PR3 was used for the BSF doping. Hybrid cells were fabricated using both implantation techniques and a maximum efficiency of 19.8% was obtained. First cells fully doped by plasma shown promising results with a yield of 18.8%.

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“…Although the first publication from IBS about PIII for crystalline silicon solar cells dates back to 2004 [7], only few papers have since been published about emitter implantation through plasma immersion [8]. Whereas IBS and INES demonstrated the strong relevance of PIII for high efficiency silicon solar cells [9], this paper studies the ability and flexibility of this immersion plasma implanter to perform emitter doping for high efficiency crystalline silicon solar cells. The influence of the emitter doping profile is observed through modeling and characterizations.…”

Section: Introductionmentioning

confidence: 96%

Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells

Michel

Perchec

Lanterne

et al. 2015

Solar Energy Materials and Solar Cells

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Ion Beam Services (IBS) has developed processes dedicated to silicon-based solar cell manufacturing using a plasma-immersion ion implantation equipment. It enables the realization of various doping profiles for phosphorus-doped emitters which fit the requirements of high-efficiency solar cells. PH 3 plasma-implanted emitters are chemically, physically and electrically characterized to demonstrate their excellent quality. Those emitters are then integrated into a low cost p-type monocrystalline silicon solar cell manufacturing line from the National Solar Energy Institute (INES) in order to be compared with usual POCl 3 diffusion. Starting from a basic process flow with blanket emitter and conventional full-area aluminum back-surface field, plasma-immersion implanted emitters enable to raise conversion efficiencies above 19.1%. Thanks to an optimized double layer anti-reflective coating, a 19.4% champion cell has been achieved. Depending on different plasma process parameters, lightly doped emitters are then engineered aiming to study doping modulation using a dedicated laser.

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19.3% Efficiency on P-Type Silicon Solar Cells by Pulsion® Plasma-Immersion Implantation

Cited by 11 publications

References 5 publications

Ion implantation of boric molecules for silicon solar cells

Ion implantation of boric molecules for silicon solar cells

New processes for homojunction silicon solar cells doping: From beam line to plasma immersion ion implantation

Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells

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