2014
DOI: 10.1016/j.solener.2014.10.029
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17.3% efficient black silicon solar cell without dielectric antireflection coating

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Cited by 23 publications
(14 citation statements)
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“…In 2014, C. Wang et al [ 48 ] also fabricated double-layered black silicon by alkaline anisotropic etching and MACE. In 2014, Z. Zhao et al [ 49 ] fabricated black silicon by MACE. It was also the first to use an alkaline etching method to form a micro pyramid morphology on the surface, and then to form micro holes in the micro pyramid structure by etching solution with silver ions.…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…In 2014, C. Wang et al [ 48 ] also fabricated double-layered black silicon by alkaline anisotropic etching and MACE. In 2014, Z. Zhao et al [ 49 ] fabricated black silicon by MACE. It was also the first to use an alkaline etching method to form a micro pyramid morphology on the surface, and then to form micro holes in the micro pyramid structure by etching solution with silver ions.…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…Monocrystalline photovoltaic cells, among all kinds of silicon photovoltaic cells, are characterized by the highest efficiency but also the highest production costs [10]. The efficiency of photovoltaic cell prototypes in laboratory tests is up to 24%, while the efficiency of the mass produced 17% [2,11]. Cells made of polycrystalline silicon have lower efficiency and lower manufacturing cost than those made of monocrystalline silicon because of the absence of the costs associated with the energy-intensive single crystal manufacturing process [12,13].…”
Section: Introductionmentioning
confidence: 99%
“…Black− Si wafers have been produced using reactive ion etching [1][2][3][4], metal-assisted chemical etching [5][6][7][8][9][10], stain etching [11], electrochemical etching [11,12], vapor chemical etching [13], surface structure chemical transfer (SSCT) [14][15][16], etc. Reactive ion etching [1][2][3][4] requires an expensive apparatus, and throughput is considerably low, leading to high fabrication costs.…”
Section: Introductionmentioning
confidence: 99%
“…Using stain etching, electrochemical etching, and vapor chemical etching, porous Si is produced [11][12][13], resulting in ultralow reflectance, while high conversion efficiencies exceeding 17% have not been achieved most probably due to poor electrical characteristics of porous Si. Metal-assisted chemical etching [5][6][7][8][9][10] mainly uses silver (Ag) particles on Si immersed in hydrofluoric acid (HF) plus hydrogen peroxide (H 2 O 2 ) solutions, and due to the promoted reaction by Ag, Ag moves into Si, forming cylindrical pore structure. The demerits of this method may be: (i) -difficulty of control of pore direction, (ii)-difficulty of complete removal of Ag, and (iii) -difficulty in the fabrication of high quality pnjunction, and (iv) -high surface area, resulting in high surface recombination rates.…”
Section: Introductionmentioning
confidence: 99%
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