16-term error model and calibration procedure for on wafer network analysis measurements (MMICs)

Butler, J.V.; Rytting, Doug; Iskander, M.F.; Pollard, R.D.; Bossche, Marc Vanden

doi:10.1109/mwsym.1991.147214

Cited by 7 publications

(2 citation statements)

References 2 publications

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“…The 16-term error model calibration method, as described in [1314], was utilized in this work. The 16-term calibration kits include a 400-μm-long thru line and six pairs of lumped elements: resistor–resistor, short–short, open–open, resistor–open, resistor–short, and open–short, all with 200 µm offset from the beginning of the line.…”

Section: Design Of Calibration Kitsmentioning

confidence: 99%

Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band

Wang

et al. 2019

Int. J. Microw. Wireless Technol.

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We present details of on-wafer-level 16-term error model calibration kits used for the characterization of W-band circuits based on a grounded coplanar waveguide (GCPW). These circuits were fabricated on a thin gallium arsenide (GaAs) substrate, and via holes, were utilized to ensure single mode propagation (i.e., eliminating the parallel-plate mode or surface mode). To ensure the accuracy of the definition for the calibration kits, multi-line thru-reflect-line (MTRL) assistant standards were also fabricated on the same wafer and measured. The same wafer also contained passive and active devices, which were measured subject to both 16-term and conventional line-reflect-reflect-match calibrations. Measurement results show that 16-term calibration kits are capable of determining the cross-talk more accurately. Other typical calibration techniques were also implemented using the standards on the GCPW calibration kits, and were compared with the MTRL calibration using a passive device under test. This revealed that the proposed GCPW GaAs calibration substrate could be a feasible alternative to conventional CPW impedance standard substrates, for on-wafer measurements at W-band and above.

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Section: Design Of Calibration Kitsmentioning

confidence: 99%

Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band

Wang

et al. 2019

Int. J. Microw. Wireless Technol.

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“…To tackle this issue, a sixteen-term error model (Fig. 1a) and several calibration methods based on the model have been developed [21], [22]. In the sixteen-term error model, eight errors (e00, e01, e10, e11, e22, e23, e32, e33) are the same as those of the traditional eight-term error model but the remaining eight errors represent the crosstalk between probes (e21 and e12), the crosstalk between receivers in the vector network analyzer (VNA) (e30 and e03), and the crosstalk between the microwave probe on one side of the DUT and the receiver of the VNA at the other side (e02, e20, e31, and e13).…”

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confidence: 99%

An Advanced Calibration Method for Probe Leakage Correction in On-Wafer Test Systems

Wang

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents an advanced calibration method for solving the error terms due to probe-probe leakage in an on-wafer test system. A new 12-term error model for the on-wafer test system including vector network analyzer (VNA), frequency extenders (if there are any), cables/waveguides, probes, probe contact pads and probe-probe leakage is introduced. A two-step calibration process and an algorithm with four on-chip calibration standards including one undefined Thru, two pairs of undefined symmetrical Reflects such as Open-Open and Short-Short pairs and a pair of known Match loads has been developed. In addition, an improved circuit model for the Match load is proposed for enhanced accuracy. The calibration method has been tested on a mismatched attenuator for the frequency range between 0.2 GHz and 110 GHz and the results are compared with numerical simulation and existing calibration methods. It's shown that the attenuator's |S11| is more consecutive and |S21| has been improved by up-to 1.7 dB. It is evident that the proposed calibration method has a simpler calibration process and less stringent requirements on calibration standards which are key for on-wafer system calibration at millimeter-wave and terahertz frequencies. More importantly, the new calibration method is more suitable for measurements in which DUTs have variable lengths.

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A new implementation of a multiport automatic network analyzer

Ferrero

Pisani

Kerwin

1992

IEEE Trans. Microwave Theory Techn.

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A generalized multiport network analyzer implemented using commercially available hardware is presented. Measurement calibration is accomplished through a novel calibration procedure which requires only conventional standards used for two-port calibrations, The calibration theory accounts for the errors due to the signal switching network but does not systematically remove errors due to signal leakage between port pairs. The approach is verified on a three-port test set implementation, and the measuring system can be expanded to n-ports with additional hardware in a straightforward manner. Experimental verification was carried out through measurement of one, two, and three ports devices connected to the test set ports in several different ways. Excellent agreement of the same corrected S-parameters measured at different test set ports was observed, and confidence in system accuracy is established through measurement of two-port verification standards.

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16-term error model and calibration procedure for on wafer network analysis measurements (MMICs)

Cited by 7 publications

References 2 publications

Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band

Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band

An Advanced Calibration Method for Probe Leakage Correction in On-Wafer Test Systems

A new implementation of a multiport automatic network analyzer

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