15 Mcps photon-counting X-ray computed tomography system using a ZnO-MPPC detector and its application to gadolinium imaging

Satô, Eiichi; Sugimura, Shigeaki; Endo, Hidenori; Oda, Y.; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Osawa, Akihiro; Miyata, Hiroshi; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shozo; Sato, Shigehiro; Onagawa, Jun

doi:10.1016/j.apradiso.2011.07.002

Cited by 28 publications

(11 citation statements)

References 13 publications

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“…The recovery time, or the photon-counting rate of SiPM is determined by the finite time taken to quench the avalanche, then reset the diode voltage to its initial bias value. This is essential for high flux photon detection in such applications as photon counting computer tomography (CT) [4][5][6], which involves a high photon-counting rate and has potential to reduce the exposure time and radiation dose. If the photon-counting rate of SiPM could be increased to hundreds of MHz or GHz, it could be applied in photon reflectometry, quantum random number generators [7][8][9], etc.…”

Section: Introductionmentioning

confidence: 99%

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

et al. 2017

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Abstract:The silicon photomultiplier (SiPM) is a promising semiconductor device for low-level light detection. The recovery time, or the photon-counting rate of the SiPM is essential for high-flux photon detection in such applications as photon counting computer tomography (CT). A SiPM with epitaxial quenching resistors (EQR SiPM) has advantages in fabricating small APD microcells connected in series with lower quenching resistors, therefore, APD cells with a low RC time constant and a short recovery time can be expected. In this report, the recovery time of EQR SiPM has been investigated using both the double light pulse method and the waveform analysis method. The results show that the recovery time of EQR SiPM is strongly dependent on the size of the active area and the number of fired pixels. For a 3 × 3 mm 2 device, while total about 90,000 pixels were fired, the recovery time was 31.1 ± 1.8 ns; while fired pixels were controlled to about 2000, the recovery time decreased significantly to 6.5 ± 0.4 ns; and the recovery time of one fired pixel was 3.1 ± 0.2 ns. For 1.4 × 1.4 mm 2 device, the recovery time was 15.2 ± 0.5 ns, while a total of about 20,000 pixels were fired. Effects that may affect the recovery time of the SiPM, including strength of the pulse light, signal transmission time delay, and the readout electronics are discussed.

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Section: Introductionmentioning

confidence: 99%

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

et al. 2017

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“…One of the prospective applications is radiation detectors -devices that can detect electromagnetic as well as corpuscular ionizing radiation [7]. Radiation detectors are used in medicine, for example, during positron emission tomography and computer tomography [8], [9]. Moreover, for security and quality control, radiation detectors are used in manufacturing as well as there are other technological applications.…”

Section: Introductionmentioning

confidence: 99%

Gallium Concentration Optimisation of Gallium Doped Zinc Oxide for Improvement of Optical Properties

Spustaka

Senko

Millers

et al. 2021

Latvian Journal of Physics and Technical Sciences

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The near-band luminescence of doped ZnO is promising for advanced scintillators; however, the dopant type and concentration effects require a detailed study. Undoped and Ga-doped ZnO nanopowders were prepared by a microwave-assisted solvothermal method and the gallium concentration effect on luminescence properties was studied. The near-band luminescence peak position dependence on gallium concentration was observed. Near-band luminescence intensity versus defect luminescence intensity ratio was explored for different gallium concentrations and the optimal value was determined. Samples were prepared with dopant concentrations between 0.2 and 1.5 at%, XRD analysis confirmed that samples contained only zinc oxide hexagonal wurtzite phase. The results of the research showed that ZnO:Ga containing 0.9 at.% gallium was promising for scintillators.

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“…Zinc oxide (ZnO) has excellent properties in terms of its thermal, mechanical, and chemical stability, and it has been recently applied to optoelectric devices in the UV region, as well as to high‐power and high‐speed electronic devices . Particularly for UV sensing, a ZnO photodiode with high sensitivity and responsivity is desired in various fields such as environmental monitoring, flame detection, and optical transmission.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of ZnO Schottky photodiode and effects of high‐energy proton irradiation

Endo

Chiba

Sakemi

et al. 2013

Physica Status Solidi (a)

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We fabricated a Pt/ZnO Schottky photodiode based on single‐crystal substrates grown by the hydrothermal growth method. We measured the electrical properties and the spectral responsivity in UV region. The responsivity was 0.1 W/A and there was a sharp cutoff wavelength corresponding to the band gap of ZnO. The fabricated diode can be used as a visible–blind sensor. We also investigated the performance of the diode for the incidence of X‐rays and observed the signal obtained. We demonstrated the potential of the ZnO device for ionizing radiation.In addition, we investigated the effects of irradiating the photodiode with high energy protons. For a sample irradiated with ∼1015 protons/cm2, the dark currents were observed to increase by a factor of 10. Moreover, the behavior of the forward currents significantly changed. In the current–voltage measurement 2 months after irradiation, the dark current decreased to the same level as that before irradiation. This behavior of the dark current may indicate that the defects generated by proton irradiation had been annihilated.

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15 Mcps photon-counting X-ray computed tomography system using a ZnO-MPPC detector and its application to gadolinium imaging

Cited by 28 publications

References 13 publications

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

Gallium Concentration Optimisation of Gallium Doped Zinc Oxide for Improvement of Optical Properties

Characteristics of ZnO Schottky photodiode and effects of high‐energy proton irradiation

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