Abstract:The near-band luminescence of doped ZnO is promising for advanced scintillators; however, the dopant type and concentration effects require a detailed study. Undoped and Ga-doped ZnO nanopowders were prepared by a microwave-assisted solvothermal method and the gallium concentration effect on luminescence properties was studied. The near-band luminescence peak position dependence on gallium concentration was observed. Near-band luminescence intensity versus defect luminescence intensity ratio was explored for d… Show more
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