15 kV, Large Area (1 cm&lt;sup&gt;2&lt;/sup&gt;), 4H-SiC p-Type Gate Turn-Off Thyristors

Cheng, Lin; Agarwal, Anant; Capell, Craig; O’Loughlin, Michael J.; Lam, Khiem; Zhang, Jincai; Richmond, Jim; Burk, Albert A.; Palmour, John W.; Ogunniyi, Aderinto; O'Brien, Heather; Scozzie, Charles

doi:10.4028/www.scientific.net/msf.740-742.978

Cited by 35 publications

(20 citation statements)

References 3 publications

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“…Research-level SiC device prototypes with blocking voltage capabilities above 15 kV have been demonstrated using floating field/guard rings (FFR/FGR) [6], [13]- [15], multi-zone (MZ)-JTE [16]- [18], optimized implantationfree (O)-JTE [19], negative bevel based (NB)-JTE [20], [21], and space-modulated (SM)-JTE [7]- [10], [22] termination structures, offering each design concept with its specific set of advantages and disadvantages. The floating guard-ring structure is processed without additional manufacturing steps but requires more than 100 rings for devices with > 10 kV blocking voltage capability [23], [24].…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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“…Lastly, a heavily doped (>1e19cm -3 ) p+ anode layer of thickness 2 µm was grown. Further design details of the devices characterized and evaluated in this research has been published by Wolfspeed and ARL and can be found in the following references [3][4][5].…”

Section: Device Structurementioning

confidence: 99%

Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs

Ogunniyi

O'Brien

Hinojosa

et al. 2016

2016 Lester Eastman Conference (LEC)

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Future Army pulsed power applications semiconductor devices that will meet requirements for highpower, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.

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“…The development of wide bandgap semiconductors like SiC has attracted great attention due to its superior material properties over Si, making devices with breakdown voltage higher than 10 kV easily achievable. Among the high-voltage SiC power devices, the gate turn-off (GTO) thyristors can achieve the best current handling capability with very lower forward drop [2] [3]. This is clearly shown in Fig.1 where the comparison of 15-kV p-GTO, n-IGBT and n-MOSFET, all based on 4H-SiC and fabricated by Cree, are provided.…”

Section: Introductionmentioning

confidence: 97%

“…The total device chip area is 2cm 2 with an active conducting area of 0.53cm 2 . Details on the device fabrication can be found in [2] [3]. …”

Section: Introductionmentioning

confidence: 99%

22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

Song

Huang

Lee

et al. 2015

2015 IEEE 27th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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Ultra-high voltage (>10 kV) power devices based on SiC are gaining significant attentions since Si power devices are typically at lower voltage levels. In this paper, a world record 22kV Silicon Carbide (SiC) p-type ETO thyristor is developed and reported as a promising candidate for ultra-high voltage applications. The device is based on a 2cm 2 22kV p type gate turn off thyristor (p-GTO) structure. Its static as well as dynamic performances are analyzed, including the anode to cathode blocking characteristics, forward conduction characteristics at different temperatures, turn-on and turn-off dynamic performances. The turn-off energy at 6kV, 7kV and 8kV respectively is also presented. In addition, theoretical boundary of the reverse biased safe operation area (RBSOA) of the 22kV SiC ETO is obtained by simulations and the experimental test also demonstrated a wide RBSOA.

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15 kV, Large Area (1 cm<sup>2</sup>), 4H-SiC p-Type Gate Turn-Off Thyristors

Cited by 35 publications

References 3 publications

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs

22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

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