15.4 A 52% Peak-Efficiency &gt;1W Isolated Power Transfer System Using Fully Integrated Magnetic-Core Transformer

Zhuo, Yue; Ma, Shaoyu; Zhao, Tong; Qin, Wenhui; Zhao, Yuanyuan; Guo, Yingjie; Chen, Baoxing

doi:10.1109/isscc.2019.8662301

Cited by 12 publications

References 2 publications

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Microtransformer on silicon with CoFeB magnetic core for high-frequency signal applications

2020

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This paper presents the development, characterization and application of a microtransformer with a bar magnetic core fabricated on silicon substrate using thin-film technology. The magnetic core, coils, and insulation layers were deposited using only sputtering PVD (physical vapor deposition) or CVD (chemical vapor deposition) processes. As insulation materials, silicon dioxide and silicon nitride are only used. The device is small with a chip size of 1600 µm x 800 µm. The transformer has a turns ratio of 1:1 and achieves a self-inductance of about 40 nH. The minimum measured breakdown voltage of the microtransformer is 1250 V(DC). The microtransformer device is applicable for frequencies up to 20 MHz. The device was fabricated on 12-inch silicon substrates on mass production equipment.

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Microtransformer on silicon with CoFeB magnetic core for high-frequency signal applications

2020

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On-chip thin-film microtransformer with improved coupling factor for high frequency data transmission

2021

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An on-chip thin-film microtransformer with an improved coupling factor is shown in this paper. In addition to the development of this component, the characterization of the microtransformer and its use in the data transmission application are presented. In comparison to previous work, this microtransformer device shows an improved coupling factor. The microtransformer is fabricated on silicon substrate using thin-film technology. The fabrication is based on damascene process and combines material deposition using only sputtering PVD (physical vapor deposition) or CVD a (chemical vapor deposition) processes and chemical-mechanical polishing (CMP) process for patterning. The microtransformer design is a solenoid type device with a magnetic bar core and interleaved winding style. For a magnetic core a CoFeB material is applied. As insulation materials, silicon dioxide and silicon nitride are implemented. The device chip size is 1.6 mm x 0.8 mm. A turns ratio of the microtransformer is 1:1, and the device shows a self-inductance of about 25 nH and an improved coupling factor with a value of 60%.

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Tiny Wafer Level Chip Scale Packaged Inductive Components for High Frequency Isolated/Non-Isolated DC-DC Converters

Dinulovic

Shousha

Haug

2021

2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

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15.4 A 52% Peak-Efficiency >1W Isolated Power Transfer System Using Fully Integrated Magnetic-Core Transformer

Cited by 12 publications

References 2 publications

Microtransformer on silicon with CoFeB magnetic core for high-frequency signal applications

Microtransformer on silicon with CoFeB magnetic core for high-frequency signal applications

On-chip thin-film microtransformer with improved coupling factor for high frequency data transmission

Tiny Wafer Level Chip Scale Packaged Inductive Components for High Frequency Isolated/Non-Isolated DC-DC Converters

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