15.1: High-Resolution Integrated a-Si Row Driver Circuits

Abstract

A 12.1" tablet panel with integrated a-Si row driver circuits has been developed using a standard TFT process and an advanced FFS technology. XGA-resolution 768-stage shift register circuit with 2-phase clocks has been elaborately designed and fabricated. We have optimized circuit parameters in order to obtain a highly reliable a-Si row driver circuit structure.

P‐12: A‐Si:H TFT Gate Driver with Shared Dual Pull‐Down Units for Large‐Sized TFT‐LCD Applications

“…In many previous designs [6], [7], lowered positive DC or unipolar pulse bias were employed to suppress the V TH shift of low-level holding TFTs, but they weaken the pull-down ability of the TFTs and decrease the allowable shift margin of V TH , which are not conducive to the extension of circuit lifetime. Owing to P-12 / Z. Hu the compensation effect of negative gate-source voltage, low-level holding TFTs in the proposed gate driver can achieve slower V TH shift speed while keeping the large V TH shift margin, and thus prolong the life of the circuit.…”

P-17: New Gate Driver Circuit for Slim-Border TFT-LCD Applications

“…Hydrogenated amorphous silicon (a-Si:H) is widely used in active-matrix liquid-crystal displays (AMLCDs) and driver circuits on glass due to its lower processing cost and better uniformity compare with low-temperature polycrystalline silicon (LTPS) [5], [7]. Thus, integrated gate driver circuits on glass using a-Si:H technology has become the main stream in TFT-LCDs for medium and large size applications due to the reduction of fabrication cost as well as the compactness of the display by eliminating driver ICs and related process [1]- [6]. Additionally, the development of slim bezel display has attracted consider-able attention because of reduction in the area of driver circuit which extends the effective display space of panel and improves the visual experience of users.…”

P‐50: Power Consumption Ameliorated for Integrated Gate Driver Circuit with Low Frequency Clock

“…Integrated gate driver circuits on glass have attracted a large amount of attention due to their many merits, such as compactness, mechanical reliability, as well as the reduction in the fabrication cost by eliminating driver ICs and related processes [1]- [6]. For active matrix backplane, hydrogenated amorphous silicon (a-Si:H) and low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are used to manufacture AMLCD and AMOLED displays [7]- [8].…”