An amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (V TH ) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate-bias stress to prevent severe degradations of TFTs. Furthermore, the negative V TH shift of driving TFT is diminished by applying positive gate-bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion-mode a-IGZO TFTs and the power consumption is estimated as 274.56 μW under the specification of 5.
This work presents a new gate driver circuit based on hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) with simple structure for liquid-crystal displays (LCDs). The circuit uses the capacitors and colck signals to periodically couple the gate node of the driving TFT to a low voltage level to enhance the stability of the presented gate driver circuit. Moreover, the clock signal drives the pull-down TFT to suppress the threshold voltage shifts. Simulation results verify that the output waveforms are sequential and uniform. Therefore, the presented gate driver circuit is applicable to slim-bezel TFT-LCD applications.
KeywordsGate driver circuit; thin-film transistor; active matrix liquidcrystal display.
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