13 Gb/s D-type flip-flop IC using GaAs MESFETs

Ohhata, M.; Yamane, Y.; Enoki, T.; Sugitani, Suehiro; Kato, Naoki; Hagimoto, K.; Hirayama, M.

doi:10.1049/el:19900674

Cited by 14 publications

(3 citation statements)

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“…A frequency divider plays an important role because it dominates the maximum operating frequency and power consumption of the frequency synthesizer or PLL system. In General, the static divider is already used in all kinds of applications, and its performance is also a benchmark for semiconductor processes [1,2]. However, the fundamental physics properties of the devices, f T and f max , usually limit the maximum operating frequency of a static divider.…”

Section: Introductionmentioning

confidence: 99%

11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO‐FF technique

Wei

Meng

Chang

et al. 2008

Micro & Optical Tech Letters

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determined by the 3-dB AR, is about 540 MHz or 20.8% (2.33-2.87 GHz) and 480 MHz or 19.6% (2.21-2.69 GHz) with minimum AR of 0.87 dB at 2.6 GHz and 0.88 dB at 2.45 GHz, respectively, for L t ϭ 0 and L t ϭ 19 mm. Both of the CP bandwidths are larger than 19%. It is evident that the length of the protruded metallic strips has larger effect on the port isolation level, but has less effect on the CP bandwidth. As for the antenna with L t ϭ 19 mm, both impedance matching (referred to 10 dB return loss) and low coupling level (referred to 20 dB isolation) are achieved within the CP operating band. Figure 4 shows the measured far-field radiation patterns of the antenna with length of L t ϭ 19 mm at 2.45 GHz in the LHCP and RHCP operation. It is observed that the cross-polarization levels are about 26 dB in the broadside direction in both states. The maximum radiation direction of the antenna displaces a little from the z-axis. It should be noted that the backside radiation pattern is a mirror image of the front pattern, and the polarization senses of both sides are opposite to each other. The antenna radiates almost the same amount of energy into both sides. CONCLUSIONA novel design of broadband dual CP square slot antenna has been investigated and successfully implemented. Two orthogonal modes of the proposed antenna are excited in series through the coupling between the T-junction and the T-shaped strip. By loading the four metallic strips at the slot corners, high port isolation level is achieved. The measured 3-dB AR bandwidth is 480 MHz or 19.6% and the isolation between two ports is better than 20 dB over the band. The proposed antenna has excellent dual CP characteristics and is suitable for polarization diversity operation.

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Section: Introductionmentioning

confidence: 99%

11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO‐FF technique

Wei

Meng

Chang

et al. 2008

Micro & Optical Tech Letters

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“…These operating speeds were approximately 45 % faster than the D-FF IC based on conventional MS-FF with the same MESFETs [8]. Figure 10 shows operating waveforms of the HLO-FF decision circuit at 19 Gb/s.…”

Section: Resultsmentioning

confidence: 98%

“…A pulse pattern generator and an error detector were used for testing up to 10 Gb/s. Over 10 Gb/s, we used a GaAs MESFET selector module [7] for input data signal generation and a GaAs MESFET D-FF IC [8] for demultiplexing the output signal of the device under test. For these measurements, we adopted a word length of z3l-1 and a bit error rate of less than 1 x…”

Section: Resultsmentioning

confidence: 99%

A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19 Gb/s decision circuit using 0.2 μm GaAs MESFET

Murata

Otsuji²,

Ohhata³

et al.

Proceedings of 1994 IEEE GaAs IC Symposium

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This paper describes a novel high-speed fliip-flop circuit named the High-speed Latching Operation Flip-Flop (HLO-FF) for GaAs SCFL Logic. We reveal the high-speed operation mechanism of HLO-FF using newly proposed analytical propagation delay time expressions. A design methodology for series gated master slave flip-flops and HLO-FFs based on these expressions is also proposed. A SPICE simulation and the fabrication of two decision ICs confirm the acuracy of our analytical method and the high speed operation of a HLO-FF decision circuit at: 19 Gb/s.

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