13.7% Efficiency graphene–gallium arsenide Schottky junction solar cells with a P3HT hole transport layer

He, Hang; Yu, Xuegong; Wu, Yichao; Mu, Xinhui; Zhu, Haiyan; Yuan, Shu; Yang, Deren

doi:10.1016/j.nanoen.2015.06.023

Cited by 39 publications

(18 citation statements)

References 29 publications

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“…The extracted ideality factors of NRI composites are presented in Table 2. Out of four devices, NRI-12 M device shows the lowest n closer to ideality, which confirms the better charge performance of this device [3,37]. This type of rather high n values is often encountered for organic semiconductors [38,39].…”

Section: Investigation Of Saturation Current Density Ideality Factorsupporting

confidence: 67%

Charge transport properties of semiconducting natural rubber (Cis 1,4-polyisoprene)

Praveen

Mandin²,

Sauvage³

2020

Microelectronic Engineering

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For the first time, an effort has been made to evaluate the charge transport properties of semiconducting natural rubber. Four different ratios of iodine-rubber composites are synthesised and tested for charge transport by current density-voltage characteristics (J-V) and impedance spectroscopy. The optimal doping ratio for best mobility value is identified, and the effect of injection barrier height on mobility is discussed. An attempt has also been made to correlate the density of states (DOS) with mobility and doping ratio. The transport properties of semiconducting natural rubber are compared with one of the most popular p-type material, Poly(3-hexylthiophene-2,5-diyl) (P3HT) under the same ambience and experimental conditions to demonstrate its potential as a cost-effective and green alternative organic semiconductor.

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Section: Investigation Of Saturation Current Density Ideality Factorsupporting

confidence: 67%

Charge transport properties of semiconducting natural rubber (Cis 1,4-polyisoprene)

Praveen

Mandin²,

Sauvage³

2020

Microelectronic Engineering

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“…Nevertheless, previous reports of improvements in V OC and FF with the addition a conducting polymer interlayer into graphene-Si solar cell have also observed an increased f B upon interlayer incorporation. 30 The increase in FF, V OC , J Sat , and improvement in diode qualities indicate that the interlayer may acting as the HTL and electron blocking layer (EBL) at the same time.…”

Section: Tablementioning

confidence: 99%

“…1(b)). [30][31][32][33][34] In this report, we explore the potential of employing spiro-OMeTAD as an interlayer between transparent conducting electrode of GOCNT and Si (GOCNT/spiro-OMeTAD/Si). Control devices without the HTL were fabricated, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Application of a hole transporting organic interlayer in graphene oxide/single walled carbon nanotube–silicon heterojunction solar cells

Batmunkh

Grace

et al. 2017

J. Mater. Chem. A

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“…Nevertheless, the PCE of these cells are still much lower than that of state‐of‐the‐art crystalline Si solar cells. Interface engineering is crucial in Schottky heterostructures based on graphene, as already reported for graphene/GaAs, graphene/InP, and graphene/CdTe solar cell . The performance of graphene/n‐Si SBSCs is highly affected by the recombination of the charge carriers at the interface between graphene and Si due to the low Schottky barrier height (≈0.6–0.7 eV), much smaller than that of traditional Si solar cells, which causes a large leakage current and thus a low open circuit voltage ( V oc ) .…”

Section: Introductionmentioning

confidence: 99%

The Role of Graphene‐Based Derivative as Interfacial Layer in Graphene/n‐Si Schottky Barrier Solar Cells

Gnisci¹,

Faggio²,

Lancellotti

et al. 2018

Physica Status Solidi (a)

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Schottky‐barrier solar cells (SBSCs) represent low‐cost candidates for photovoltaics applications. The engineering of the interface between absorber and front electrode is crucial for reducing the dark current, blocking the majority carriers injected into the electrode, and reducing surface recombination. The presence of tailored interfacial layers between the metal electrode and the semiconductor absorber can improve the cell performance. In this work, the interface of a graphene/n‐type Si SBSC by introducing a graphene‐based derivative (GBD) layer meant to reduce the Schottky‐barrier height (SBH) and ease the charge collection are engineered. The chemical vapor deposition (CVD) parameters are tuned to obtain the two graphene films with different structure and electrical properties: few‐layer graphene (FLG) working as transparent conductive electrode and GBD layer with electron‐blocking and hole‐transporting properties. Test SBSCs are fabricated to evaluate the effect of the introduction of GBD as interlayer into the FLG/n‐Si junction. The GBD layer reduces the recombination at the interface between graphene and n‐Si, and improves the external quantum efficiency (EQE) with optical bias from 50 to 60%. The FLG/GBD/n‐Si cell attains a power conversion efficiency (PCE) of ≈5%, which increase to 6.7% after a doping treatment by nitric acid vapor.

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13.7% Efficiency graphene–gallium arsenide Schottky junction solar cells with a P3HT hole transport layer

Cited by 39 publications

References 29 publications

Charge transport properties of semiconducting natural rubber (Cis 1,4-polyisoprene)

Charge transport properties of semiconducting natural rubber (Cis 1,4-polyisoprene)

Application of a hole transporting organic interlayer in graphene oxide/single walled carbon nanotube–silicon heterojunction solar cells

The Role of Graphene‐Based Derivative as Interfacial Layer in Graphene/n‐Si Schottky Barrier Solar Cells

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