13.6%-efficient Cu(In,Ga)Se2 solar cell with absorber fabricated by RF sputtering of (In,Ga)2Se3 and CuSe targets

Improving the characteristics of CdS and CIAS films and the performances of CIAS solar cells by electrodeposition Cu–Se/CIAS binary structure precursors on FTO substrate

“…Thus, the recombination of Cu-Se, In-Se, and Al-Se compounds may proceed at the interface of Cu-Se and CIAS films, following 1D diffusion [42,43], leading to the formation of large grains and smooth surface for post-annealed CIAS films. The same phenomenon was reported by Ishizuka et al [33] and Zhu et al [34]. Table 3 shows the chemical composition and corresponding atom ratio of single-and binary-structure post-annealed CIAS films.…”

“…CIS-based film with Cu-rich stoichiometry usually has a smooth surface and compact crystalline with large grain size [31,32]. Ishizuka et al [33] and Zhu et al [34] reported that the Cu-Se liquid phase is beneficial to the formation of large grains and smooth surface of CIGS film films during the growth process. In this study, we examined the improvement of surface morphology and structure of CIAS films by adjusting the post-annealing temperature.…”

Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

“…There are various fabrication methods for CIGS film, where co-evaporation process is a typical method [1]. In recent years, one-step magnetron sputtering process [2][3][4][5][6][7][8][9][10][11][12][13] is developed and presents a potential application in preparing CIGS film. For the one-step sputtering process, a quaternary CIGS ceramic target is directly employed, which is evidently simple in the preparation process of CIGS film.…”

“…Zhou et al [2] had studied the effects of substrate temperature, working pressure and sputtering power on the crystallinity, grain size, and microstructure of the CIGS films deposited by one-step RF magnetron sputtering, and found an obvious preferred orientation of (220)/(204) at high sputtering power and high working pressure. By the way, previously almost all the CIGS films prepared by one-step sputtering process were random or (112)-oriented [3][4][5][6][7][8][9][10][11][12][13]. Siebentritt et al [14] and Jiang et al [15] indicated that the preferred orientation of (220)/(204) in CIGS film is beneficial to enhance the property of photovoltaic device.…”

Rapid synthesis of CuInSe 2 from sputter-deposited bilayer In 2 Se 3 /Cu 2 Se precursors

“…They suggested that the formation of an intermediate Mo/(In,Ga) 2 Se 3 /CIGS/(CuSe + liquid) structure likely enhances the grain growth of CIGS, which can be explained either with a liquid phase-assisted growth model or with a vapor-liquid-solid (V-L-S) growth model [6,7]. Zhu et al reported 13.6% efficiency for the CIGS cell using the absorber fabricated by sequential RF sputtering of (In,Ga) 2 Se 3 and CuSe targets, followed by subsequent selenization at 550°C for 30 min [8].…”