128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk

Abstract

High temporal and spatial coherent simultaneous long-wavelength/mid-wavelength (LW/MW) two-color focal plane array (FPA) infrared detection is the cutting-edge technique for third-generation infrared remote sensing. In this Letter, HgCdTe LW/MW two-color infrared detectors were designed and fabricated. The top long-wavelength and bottom mid-wavelength infrared planar photodiodes were processed by selective B(+)-implantation after etching the long-wavelength epilayer into a curvature and exposing the mid-wavelength layers for the implantation of the n region of the MW photodiode by a micro-mesa array technique. A 128×128 MW/LW HgCdTe infrared FPA detector is fabricated photo-lithographically by simultaneous nonplanar B(+)-implantation of the LW and MW photodiodes, passivation and metallization of the sidewalls, mesa isolation, and flip-chip hybridization with a read-out integrated circuit. The inner mechanisms for suppressing the cross talk and improving photoresponse have been carried out by combining experimental work with numerical simulations.

Numerical analysis of HgCdTe dual-band infrared detector

“…The simplest n-P-N triple-layer heterojunction (TLHJ) back-to-back photodiode operating in the bias-selectable mode was reported by Raytheon (Wilson et al 1994;Smith et al 2011). The same mode with more complicate n-p-P-p-n architecture and was proposed by Leti (Ballet et al 2004) and later by Shanghai Institute of Technical Physics (Hu et al 2014). Simultaneous mode has been achieved in a number of ingenious architectures: n-p-n design by Raytheon (Rajavel et al 1998) p-n-N-p-n BAE System (Reine et al 1998), n-p-P-p-n Leti (Zanatta et al 2000) and structures based on p-on-n or n-on-p junction-Rockwell (Tennant et al 2001) and Leti (Destefanis et al 2007) respectively.…”

Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature

“…[3][4][5][6][7][8] It was shown that HgCdTe multilayer structures offer multicolor capability in the shortwave (SWIR), midwave (MWIR) and longwave (LWIR) ranges or at two different wavelengths within the same band. [9][10][11][12][13][14] In this paper, the performance of sequential dualband mid-wavelength N + -n-p-p-P + -p-p-n-n + backto-back HgCdTe photodiode grown by MOCVD operating at room temperature is presented. The influence of a p-type separating-barrier layer on dark current, photocurrent and response time was analyzed.…”

Compact gas cell integrated with a linear variable optical filter

“…2(a). Several research groups have reported miniaturized light sources [18][19][20], optical filters [17,[21][22][23][24][25][26][27][28], and detectors [29,30]. However, the sample cell which is used for storing the sample gas occupies a large part of the microspectrometer.…”