Demonstration of a Dual-Band Mid-Wavelength HgCdTe Detector Operating at Room Temperature

Abstract

In this paper, the performance of sequential dual-band mid-wavelength N +-np-p-P +-p-p-n-n + back-to-back HgCdTe photodiode grown by metal-organic chemical vapor deposition (MOCVD) operating at room temperature is presented. The details of the MOCVD growth procedure are given. The influence of p-type separating-barrier layer on dark current, photocurrent and response time was analyzed. Detectivity without immersion D * higher than 1 9 10 8 cmHz 1/2 /W was estimated for k Peak = 3.2 lm and 4.2 lm, respectively. A response time of s s $ 1 ns could be reached in both MW1 and MW2 ranges for the optimal P + barrier Cd composition at the range 0.38-0.42, and extra series resistance related to the processing R Series equal to 500 X.