12 W/mm AlGaN–GaN HFETs on Silicon Substrates

Johnson, J. W.; Piner, Edwin L.; Vescan, A.; Therrien, R.; Rajagopal, P.; Roberts, John C.; Brown, J.D.; Singhal, Sameer; Linthicum, K. J.

doi:10.1109/led.2004.831190

Cited by 210 publications

(118 citation statements)

References 10 publications

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“…[1][2][3][4] Epitaxial AlGaN/GaN heterostructure forms two-dimensional electron gas (2DEG) at the interface due to the unique polarization properties of III-Nitride materials. 5,6 The spontaneous polarization and piezoelectric polarizations play an important role in the formation of 2DEG at the AlGaN/GaN interfaces.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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“…The O + ion implant isolation was also investigated on AlGaAs [9], InAlN [10], and GaN (n-type doping)/GaN materials [11] to study the isolation quality, and P/He, Ar + , and N + ions have been employed in AlGaN/GaN HEMTs [12]- [14].…”

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confidence: 99%

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu

Huang

Desmaris

et al. 2007

IEEE Electron Device Lett.

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Abstract-A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag-and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = −4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = −4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.Index Terms-GaN, high electron mobility transistors (HEMTs), implantation, power density, pulsed I-V , transient.

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“…It has to be noted that 0.25 mm devices with a FP-extension of 0.5µm towards the drain contact, i.e. their extension towards the drain is 0.25µm longer than the extension of the top of the T-gates, yield a [1,3,[10][11][12][13]. It can be concluded that we have achieved state-of-the-art results with respect to the generation of large, i.e.…”

Section: Large-periphery Devicesmentioning

confidence: 96%

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

et al. 2008

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We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (W g ) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an optimized process flow comprising a low-power Ar-based plasma after ohmic contact metallization, cleaning of the AlGaN surface prior to the Schottky gate metallization using a diluted ammonia (NH 4 OH) solution, and passivation of the AlGaN surface using a silicon nitride layer deposited by plasma enhanced chemical vapor deposition. We will show that the best RF power performance has been achieved by HEMTs with iron-doped GaN buffer layers (GaN:Fe). Devices with a total gate width of 1 mm yielded a maximum output power of 11.9 W at S-band (2 -4 GHz) under class AB bias conditions (V DS = 40 -60 V, and V GS = -4.65 --4.0 V).

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12 W/mm AlGaN–GaN HFETs on Silicon Substrates

Cited by 210 publications

References 10 publications

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

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