12.29% Low Temperature–Processed Dopant‐Free CdS/p‐Si Heterojunction Solar Cells

Abstract

Most crystalline silicon (c‐Si) solar cells are based on high temperature–processed p‐n junctions or highly doped heterojunctions. The concept of dopant‐free carrier selective contact has become a research hotspot and been successfully demonstrated with n‐type Si wafers, showing the great potential of simplified fabrication process and lower thermal‐consuming. However, there are few successful cases on p‐Si, dopant‐free p‐Si/CdS (cadmium sulfide)/ITO (indium tin oxide) solar cells with champion efficiency of 12.29% (device area 4 cm2) have been demonstrated with DC magnetron sputtered CdS thin films working as electron‐selective contact. A proper annealing treatment is found essential in improving the p‐Si/CdS/ITO heterocontact and device performance. The author's preliminary results confirm the feasibility of preparation of efficient p‐Si wafer–based dopant‐free solar cells.

Electronic Structure of In3–xSe4 Electron Transport Layer for Chalcogenide/p-Si Heterojunction Solar Cells

“…18−20 More recently, CdS/p-Si heterojunction solar cells have also been reported with an efficiency of 12.29%. 21 Furthermore, n-InSe/p-Si heterojunction solar cells have been demonstrated as a promising structure to harness solar energy, although they show a very low efficiency due to high interfacial defects. 22 Moreover, it is also reported that chalcogenide thin films can be fabricated by low-cost solution process, which indicates their potential in future solution-processed chalcogenide/c-Si heterojunction solar cell applications.…”

“…In recent years, metal chalcogenide-based n-Si heterojunction solar cells have been reported. − More recently, CdS/p-Si heterojunction solar cells have also been reported with an efficiency of 12.29% . Furthermore, n-InSe/p-Si heterojunction solar cells have been demonstrated as a promising structure to harness solar energy, although they show a very low efficiency due to high interfacial defects .…”

Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells

“…Based on the simplified conditions which given in Eqs. (12)(13)(14), now, we can formulate Eq. ( 6) so that the expression of the total current in the circuit is as follows [16,17]:…”

“…In CdS semiconductors, there are great efforts and various works. The optical, thermal and electrical aspects of CdS semiconductor were studied [6][7][8][9][10][11][12][13].…”

Photosensitive Thin Films Based on Drop Cast and Langmuir-Blodgett Hydrophilic and Hydrophobic CdS Nanoparticles

“…CdS is one of the important II-VI semiconducting materials with 2.42 eV direct bandgap corresponding to the visible part of the electromagnetic spectrum [21]. Due to this fact, it is widely used in photovoltaics [22,23] and photocatalysis [24,25]. The production of semiconductor QDs or thin layers is significantly cheaper compared to their bulk counterparts since their synthesis takes place at significantly lower temperatures and with solution-based approaches.…”