10kV SiC MPS diodes for high temperature applications

Jiang, Yifan; Sung, Woongje; Song, X.; Ke, Haotao; Liu, Siyang; Baliga, B. Jayant; Huang, Alex Q.; Brunt, Edward Van

doi:10.1109/ispsd.2016.7520773

Cited by 18 publications

(5 citation statements)

References 5 publications

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“…The dynamic switching characteristics of the SiC JBS diodes were tested using a clamped inductive switching circuit ( [15][16][17][18][19]). The circuit schematic of the test rig is shown in Fig.…”

Section: Double Pulse Switching Testmentioning

confidence: 99%

3.3 kV SiC JBS diodes employing a P₂O₅ surface passivation treatment to improve electrical characteristics

Renz

Vavasour

Shah

et al. 2021

2021 IEEE Energy Conversion Congress and Exposition (ECCE)

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kV Schottky barrier diodes and JunctionBarrier Schottky diodes have been fabricated, employing a phosphorous pentoxide (P2O5) surface treatment prior to metal deposition in an attempt to further condition the power device's interface. For SBD structures, the treatment consistently reduces the leakage current in molybdenum, tungsten and niobium SBDs, for the tungsten treatment by more than four orders of magnitude. X-ray photoelectron spectroscopy (XPS) analysis on the treated SBD interface revealed formation of a metal phosphate between P2O5 and the metal. When compared to an untreated sample, the P2O5 treatment has increased the valence band to fermi level offset by 0.2 eV to 3.25 eV, indicating that the treatment results in a degenerately n-doped SiC surface. When applied to fully optimised 3.3 kV JBS power structures utilizing a hybrid JTE design, P2O5 treatments improved blocking capabilities across the entire dataset by as much as 1,000 V.

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Section: Double Pulse Switching Testmentioning

confidence: 99%

3.3 kV SiC JBS diodes employing a P₂O₅ surface passivation treatment to improve electrical characteristics

Renz

Vavasour

Shah

et al. 2021

2021 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…The typical structure of SiC schottky diode is JBS/MPS, which consists of interdigitated schottky and p+ doping region [16], [17]. The structure of JBS and MPS diodes are similar, the main difference is the width of p+ region.…”

Section: Device Analysis Using Tcad Simulationmentioning

confidence: 99%

Analysis of 600 V/650 V SiC Schottky Diodes at Extremely High Temperatures

Wang

Yang

et al. 2020

CPSS TPEA

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This paper evaluates the thermal characterization of late generation SiC schottky diodes. 600 V/650 V SiC diodes from 3 well-known manufacturers are tested: Wolfspeed, Infineon and Rohm. A comprehensive study is performed for a wide temperature range from 20 °C (room temperature) up to 500 °C, aiming to find the absolute maximum parameters of SiC schottky diodes at extremely high temperature environments. Both static and dynamic characterizations are evaluated and explained. TCAD simulations are proposed to express the abnormal phenomenon occurred in test results, especially the mechanism of hole carrier transportation in extremely high temperature. This work exhibits the performance of SiC schottky diodes for high temperature application conditions.

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“…Due to a thinner drift layer and a higher doping concentration at same voltage rating, the HV SiC junction barrier Schottky (JBS) diode which highly mitigated reverse recovery becomes possible [21]- [26]. It significantly reduces the switching loss.…”

Section: ) Diodementioning

confidence: 99%

Overview of high voltage sic power semiconductor devices: development and application

Zhang

Wang

2017

Trans. Electr. Mach. Syst.

149

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Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years. This paper overviews the development and status of HV SiC devices. Meanwhile, benefits of HV SiC devices are presented. The technologies and challenges for HV SiC device application in converter design are discussed. The state-of-the-art applications of HV SiC devices are also reviewed. Index Terms-High voltage, SiC power semiconductor devices, SiC-based converter.Recently, the emerging HV SiC devices demonstrate the promising performance in terms of high voltage rating, low specific on-resistance and fast switching speed [56]. This section focuses on the characteristics of HV SiC devices versus their Si counterparts. A. Comparison to SiRecent breakthroughs in wide band gap (WBG) SiC material and fabrication technology have led to the development of high

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10kV SiC MPS diodes for high temperature applications

Cited by 18 publications

References 5 publications

3.3 kV SiC JBS diodes employing a P₂O₅ surface passivation treatment to improve electrical characteristics

3.3 kV SiC JBS diodes employing a P₂O₅ surface passivation treatment to improve electrical characteristics

Analysis of 600 V/650 V SiC Schottky Diodes at Extremely High Temperatures

Overview of high voltage sic power semiconductor devices: development and application

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10kV SiC MPS diodes for high temperature applications

Cited by 18 publications

References 5 publications

3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics

3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics

Analysis of 600 V/650 V SiC Schottky Diodes at Extremely High Temperatures

Overview of high voltage sic power semiconductor devices: development and application

Contact Info

Product

Resources

About

3.3 kV SiC JBS diodes employing a P₂O₅ surface passivation treatment to improve electrical characteristics

3.3 kV SiC JBS diodes employing a P₂O₅ surface passivation treatment to improve electrical characteristics