1060-nm single-mode transverse coupled cavity VCSEL with intra-cavity surface relief for 58-Gbps modulation and 5-km single-mode fiber transmission

Abstract

In this Letter, we report a 1060-nm vertical-cavity surface-emitting laser with intra-cavity surface relief engineering that provides transverse-resonance in transverse-coupled cavities, enabling single-mode operation and bandwidth enhancement at the same time. A single-mode power of over 2.5 mW and 3-dB modulation bandwidth enhancement from 15 to 23 GHz was demonstrated with an oxide aperture diameter as large as 6 μm. We obtained non-return-to-zero signals of up to 58 Gbps with eye-opening through a 5-km long standard single-mode fiber (G652). The 3-dB modulation bandwidth is enhanced by the negative dispersion of the fiber and pre-equalization via calibration of the end-to-end channel response. Our device shows great potential for its use in high-speed and compact optical transmitters in the next-generation hyper-scale datacenters and 6G network.

Dynamics and feedback sensitivity of vertical-cavity surface-emitting lasers with arbitrary optical feedback intensity

“…With the hexagonal laterally-coupled-cavities adiabatically coupled with the middle cavity, the modulation bandwidth of 45 GHz was realized, which is increased by a factor of 5 compared with the modulation bandwidth of the traditional VCSELs on the same wafer [27]. The modulation bandwidth of the 1060 nm VCSEL is enhanced from 15 GHz to 23 GHz due to the transverse-resonance provided by the intra-cavity surface relief engineering in the transverse-coupled cavities [28].…”

“…At present, many studies of the optical feedback in the semiconductor lasers are based on the Lang-Kobayashi (L-K) model, traveling-wave model and so on [25][26][27][28][29][30]. The multiple round trips in the optical feedback cavity are considered in the original L-K model, but are ignored in the applications.…”

Research Progress of Horizontal Cavity Surface-Emitting Laser

“…Commercial vertical-cavity surface-emitting semiconductor lasers (VCSELs) have superior performance with excellent beam shape, no cavity surface catastrophe damage, and easy two-dimensional integration [12]. However, the thin active region of VCSEL results in a lower single-way gain [13], which limits its output power severely. Even with lateral multimode, the competition from higher-order modes can degrade beam quality substantially [14,15].…”