1040 X 1040 infrared charge sweep device imager with PtSi Schottky-barrier detectors

Akiyama, Akira; Seto, Toshiki; Mori, Akiyoshi; Ishigaki, Ryuji; Itoh, Sho; Yutani, Naoki; Kimata, Masafumi; Tsubouchi, N.; Sasaki, Tatsuro

doi:10.1117/12.162277

Cited by 11 publications

(2 citation statements)

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“…In 1993, the 1040 × 1040 charge scanning device infrared FPA was developed by Mitsubishi Corporation of Japan. It is the first silicide array that can reach megapixels with the highest spatial resolution and minimum image . However, because of the low hot carrier emission efficiency of the metal material and the momentum mismatch between the electron states in the metal and Si of the silicide Schottky barrier photodetector, the responsivity (R) of these silicon-compatible devices is limited to less than 0.1 A/W. , …”

Section: Introductionmentioning

confidence: 99%

“…It is the first silicide array that can reach megapixels with the highest spatial resolution and minimum image. 4 However, because of the low hot carrier emission efficiency of the metal material and the momentum mismatch between the electron states in the metal and Si of the silicide Schottky barrier photodetector, the responsivity (R) of these silicon-compatible devices is limited to less than 0.1 A/W. 5,6 Compared with metal materials, graphene (Gr) has a longer hot carrier relaxation time and higher hot carrier temperature, which can achieve higher hot carrier emission efficiency.…”

Section: Introductionmentioning

confidence: 99%

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Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction

Liu

Zhou

Luo

et al. 2019

ACS Appl. Mater. Interfaces

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Because of the slow relaxation process according to weak acoustic phonon interaction, the photothermionic effect in graphene could be much more obvious than in the metal film, so a graphene heterojunction photodetector based on the photothermionic effect is promising for infrared imaging applications. However, the 2.3% absorption rate of the graphene film presents a severe limitation. Here, in situ grown graphene nanowalls (GNWs) were integrated on the silicon substrate interfaced with Au nanoparticles. Because of the strong infrared absorption and hot-carrier relaxation process in GNWs, the asprepared GNWs/Au/silicon heterojunction has a photo to dark ratio of 2 × 10 4 , responsivity of 138 mA/W, and linear dynamic range of 89.7 dB, with a specific detectivity of 1.4 × 10 10 and 1.6 × 10 9 cm Hz 1/2 /W based on calculated and measured noise, respectively, in 1550 nm at room temperature, and has the best performance among silicon-compatible infrared photodetectors without any complicated waveguide structures. Obvious photoresponses are also detected in the mid-infrared and terahertz band. The interface Au particle is found to reduce the barrier height and enhance absorption. The device structure in this report could be compatible with the semiconductor process, so that infrared photodetectors with high integration density and low cost could be potentially realized.

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Section: Introductionmentioning

confidence: 99%