101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit

Tsou, Chuan‐Wei; Lin, Chen-Yi; Lian, Yi-Wei; Hsu, Shawn S. H.

doi:10.1109/ted.2015.2439699

Cited by 44 publications

(16 citation statements)

References 23 publications

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“…However, when the fraction of Al exceeds 0.3 [6][7][8], the 2DEG transport properties would be seriously degraded and would finally limit further improvement of the device's performance. To avoid the problem of strain relaxation in AlGaN, a novel material system has been developed by replacing an AlGaN barrier with InAlN [9][10][11][12][13][14]. It is believed that the InAlN/GaN structure induces a higher sheet density and better carrier confinement as compared with the typical AlGaN/GaN structure.…”

Section: Introductionmentioning

confidence: 99%

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

et al. 2018

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A comprehensive model for 2DEG characteristics of InxAl1−xN/AlN/GaN heterostructure has been presented, taking both polarization and bulk ionized charge into account. Investigations on the 2DEG density and electron distribution across the heterostructure have been carried out using solutions of coupled 1-D Schrödinger-Poisson equations solved by an improved iterative scheme. The proposed model extends a previous approach allowing for estimating the quantum mechanical effect for a generic InAlN/GaN-based HEMT within the range of the Hartree approximation. A critical AlN thickness (~2.28 nm) is predicted when considering the 2DEG density in dependence on a lattice matched In0.17Al0.83N thickness. The obtained results present in this work provide a guideline for the experimental observation of the subband structure of InAlN/GaN heterostructure and may be used as a design tool for the optimization of that epilayer structure.

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Section: Introductionmentioning

confidence: 99%

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

et al. 2018

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“…The Johnson's FOM, defined as f T × BV, is 4.65 THz V. benchmarks our results of Johnson's FOM as a function of gate length with those reported in GaN-on-Si devices. 5,[21][22][23][24][25][26][27][28][29][30] It can be seen that our achieved Johnson's FOM is higher than those reported GaN-on-Si HEMTs with L g < 100 nm. Figure 6(c) summarizes the reported results of breakdown voltage BV as a function of f T in both GaN-on-Si and GaNon-SiC devices.…”

mentioning

confidence: 57%

Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f _T of 310 GHz

Xie

Liu

Gao

et al. 2019

Appl. Phys. Express

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A deeply-scaled GaN-on-Si high electron mobility transistor with a record-high cut-off frequency (fT) of 310 GHz has been demonstrated. The device has an InAlN/GaN heterojunction structure, a source–drain spacing of 400 nm, and a gate length of 40 nm. The device exhibited a high drain current of 2.34 A mm−1, a peak transconductance of 523 mS mm−1, and a gate-to-drain breakdown voltage (BVgd) of 15 V. A Johnson’s figure-of-merit (FOM = fT × BV) of 4.65 THz V has been achieved, which is comparable to those reported in GaN-on-SiC. These results indicate GaN-on-Si transistors are promising in low-cost emerging mm-wave applications.

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“…Figure10shows the comparison of J-FOM (= fT × BVgd) as a function of the gate length for various GaN-based HEMTs[20,21,[29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. The MIS-HEMTs that were fabricated in this study exhibited the J-FOM in the range between 5.57 and 10.67 THz•V, which are the state-of-the-art values reported for GaN-based HEMTs.…”

mentioning

confidence: 71%

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

et al. 2020

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This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

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101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit

Cited by 44 publications

References 23 publications

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f _T of 310 GHz

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

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101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit

Cited by 44 publications

References 23 publications

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

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Product

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Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f _T of 310 GHz