100 μm-Cavity GaN-Based Edge Emitting Laser Diodes by the Automatic Cleavage Technique Using GaN-on-Si Epitaxial Lateral Overgrowth

Kawaguchi, Yoshinobu; Murakawa, Kentaro; Usagawa, Motohisa; Aoki, Yuuta; Takeuchi, Kazuma; Kamikawa, Takeshi

doi:10.1021/acs.cgd.3c00070

Cited by 6 publications

(2 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The removed micro-LED chip emitted at a wavelength of 424 nm. This novel fabrication method enables to become a platform technology having removability from silicon substrates, which can easily produce many kinds of microlight sources with high crystal quality and thin layers …”

Section: Discussionmentioning

confidence: 99%

Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method

Kamikawa,

Kobayashi,

Aoki

et al. 2023

Crystal Growth & Design

Self Cite

View full text Add to dashboard Cite

Microlight-emitting diodes were fabricated using an original substrate (ELO GaN on silicon; EGOS). The EGOS substrate was fabricated by growing a GaN layer on a (111)-plane silicon substrate via the epitaxial lateral overgrowth technique. The EGOS substrate has a wide mask that formed an open area. The widths of the ELO mask and open area are 51.5 and 3.5 μm, respectively. Whole micro-LEDs could be formed within the wing area by widening its width, which has a low defect density. Because the adjacent ELO layers do not coalesce into each other, gaps are present between the ELO layers. The EGOS substrate exhibits a ridge structure that is formed via the dry-etched method, facilitating the removal of the chips from the EGOS substrate. The optimizing growth condition of the ELO GaN layer was realizing 3.2 μm in thickness even though the width of the LEO layer is over 47 μm. Cathode luminescence measurement did not show dislocations at the wing area of the ELO layer. The micro-LEDs fabricated via this method emitted at 424 nm, proving the feasibility of the method. The original substrate with an ELO layer can be used as a platform to fabricate many kinds of microlight sources with an ultralow dislocation density.

show abstract

Section: Discussionmentioning

confidence: 99%

Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method

Kamikawa,

Kobayashi,

Aoki

et al. 2023

Crystal Growth & Design

Self Cite

View full text Add to dashboard Cite

show abstract

“…Furthermore, understanding the strain state in microareas has become more important because the device size has decreased, such as in micro-light-emitting diodes (microLEDs) and micro electro mechanical systems (MEMSs) 8,[12][13][14] . In addition, the 100 μm cavity GaN based edge emitting laser diodes (LDs) was fabricated by an automatic cleavage technique using anisotropic strain in microareas 15 , and an accurate understanding of the strain field is essential. In other words, a method for evaluating axially resolved strain in a microarea is essential for future research and development of III-V semiconductor devices.…”

mentioning

confidence: 99%

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Takeuchi,

Ogura,

Hasuike

et al. 2024

Sci Rep

Self Cite

View full text Add to dashboard Cite

Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with $$z(xx)\overline{z }$$ z ( x x ) z ¯ and $$z(yx)\overline{z }$$ z ( y x ) z ¯ polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.

show abstract

High growth rate magnetron sputter epitaxy of GaN using a solid Ga target

Pingen,

Hinz,

Sandström

et al. 2024

Vacuum

View full text Add to dashboard Cite

100 μm-Cavity GaN-Based Edge Emitting Laser Diodes by the Automatic Cleavage Technique Using GaN-on-Si Epitaxial Lateral Overgrowth

Cited by 6 publications

References 28 publications

Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method

Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

High growth rate magnetron sputter epitaxy of GaN using a solid Ga target

Contact Info

Product

Resources

About