Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method

Kamikawa, Takeshi; Kobayashi, Toshihiro; Aoki, Yuuta; Suda, Noboru; Ogura, Hiroyuki; Seida, Mitsunari; Takeuchi, Kazuma; Mishima, Kosuke; Taniguchi, Yuki; Yamashita, Fumio; Hayashi, Yuuichiro; Masaki, Katsuaki

doi:10.1021/acs.cgd.3c00069

Cited by 9 publications

(2 citation statements)

References 23 publications

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“…Anisotropically strained c-plane GaN samples were grown on Si and sapphire substrates using the epitaxial lateral overgrowth (ELO) technique 19 . A schematic diagram of ELO-GaN is shown in Fig.…”

Section: Polarized Raman Spectra Of Isotropic/anisotropic Strain Ganmentioning

confidence: 99%

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Takeuchi,

Ogura,

Hasuike

et al. 2024

Sci Rep

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Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with $$z(xx)\overline{z }$$ z ( x x ) z ¯ and $$z(yx)\overline{z }$$ z ( y x ) z ¯ polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.

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Section: Polarized Raman Spectra Of Isotropic/anisotropic Strain Ganmentioning

confidence: 99%

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Takeuchi,

Ogura,

Hasuike

et al. 2024

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…Gallium nitride (GaN), with its superior properties, such as wide band gap (3.4 eV), excellent physical and chemical stability, high breakdown voltage, and carrier mobility, has become one of the most widely used third-generation semiconductor materials in the fields of optoelectronics, radio frequency, and high-power electronic applications. − It is well known that the crystal structure of wurtzite GaN is formed by the sequential stacking arrangement of one layer of Ga and one layer of N along the polar c direction . The difference in electronegativity leads to the formation of electric dipoles, which in turn results in spontaneous polarization.…”

Section: Introductionmentioning

confidence: 99%

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

Li,

Wang,

Chen

et al. 2024

Crystal Growth & Design

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The undesirable effects of the degraded device performance and shorter lifetime caused by the polarization electric field induced by polar GaN have contributed to an increasing interest in the fundamental research and promising applications of nonpolar GaN. Herein, we demonstrate a strategy to construct high-quality arrays of well-aligned nonpolar GaN nanorods on the Au-coated (100) γ-LiAlO 2 substrates by the chemical vapor deposition method. During the growth process, the Au particles that were originally at the tips of the nanorods were found to gradually disappear with time. The disappearance of Au particles solved the problem of catalyst contamination and also demonstrated an interesting growth mechanism: whereas the traditional vapor−liquid− solid dominated the initial growth stage, the Au catalyst began to migrate and detach under the relatively Ga-rich condition, and then the vapor−solid controlled the subsequent growth. The E 2 (high) phonon peak (567.7 cm −1 ) and the strong ultraviolet emission peak (362.0 nm) indicate that the nonpolar GaN nanorods are virtually strain-free and have a high crystallization quality. Additionally, the effects of NH 3 and the thickness of Au films on the growth of GaN nanorods were thoroughly investigated. The well-arranged nonpolar GaN nanorod arrays with excellent crystal quality will provide a referable nanomaterial choice for highperformance, high-efficiency nonpolar nanodevices.

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The quality of epitaxial lateral overgrown diamond on substrate with laser-cut holes of varying shapes and side orientations

Zhao,

Yang,

Weng

et al. 2024

Diamond and Related Materials

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Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method

Cited by 9 publications

References 23 publications

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

The quality of epitaxial lateral overgrown diamond on substrate with laser-cut holes of varying shapes and side orientations

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