100 W GaN HEMT power amplifier module with 60% efficiency over 100–1000 MHz bandwidth

Krishnamurthy, K.; Driver, T.; Vetury, R.; Martin, J.

doi:10.1109/mwsym.2010.5518242

Cited by 6 publications

(6 citation statements)

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“…Let 𝐾 𝑄 (𝑗𝜔) = 𝑅 𝑄 (𝜔) + 𝑗𝑋 𝑄 (𝜔) be the RF-LST based minimum Driving Point Input Immittance (DPI) in Darlington sense. Let 𝑇(𝜔) be the transducer power gain (𝑇𝑃𝐺) of the virtually matched system as specified by (8), which is optimized over the specified normalized angular frequency bandwidth 𝐵 such that 𝐵 = [𝜔 𝑐2 − 𝜔 𝑐1 ].…”

Section: A the Best Transducer Power Gain T(ω)mentioning

confidence: 99%

“…For wireless communication systems, it is essential to design power amplifiers (PAs) for variety of applications. [1][2][3][4][5][6][7][8] Nowadays, it is a common practice to employ gallium nitrate (GaN) transistors due to their high-power-delivering capacity. [9][10][11][12][13] In practice, PA design process starts with careful selection of the power transistor considering the design parameters such as the required output signal power to be delivered, power added efficiency (PAE) of the amplifier, and transducer power gain (TPG) over the specified bandwidth.…”

Section: Introductionmentioning

confidence: 99%

“…For wireless communication systems, it is essential to design power amplifiers (PAs) for variety of applications 1–8 . Nowadays, it is a common practice to employ gallium nitrate (

GaN

) transistors due to their high‐power‐delivering capacity 9–13 .…”

Section: Introductionmentioning

confidence: 99%

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Broadband performance assessment of a microwave power transistor employing the real frequency technique

Kılınç

Ejaz

Yarman

et al. 2022

Circuit Theory & Apps

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Generation of proper source/ load pull impedances for a selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel "Real Frequency Line Segment Technique" based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake and power delivery capacity of the amplifier. During the numerical performance assessments process, a robust tool called "Virtual Gain Optimization" is presented. Finally, a new definition called "Power-Performance-Product" is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely "Wolfspeed CG2H40045", over 0.8-3.8 GHz bandwidth.

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Section: A the Best Transducer Power Gain T(ω)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Broadband performance assessment of a microwave power transistor employing the real frequency technique

Kılınç

Ejaz

Yarman

et al. 2022

Circuit Theory & Apps

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show abstract

“…OR wireless communication systems, it is essential to design power amplifiers (PA) for variety of applications [1][2][3][4][5][6][7][8]. Nowadays, it is a common practice to employ Gallium Nitrate (𝐺𝑎𝑁) transistors due to their high-power delivering capacity [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

Yarman¹

2022

Preprint

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selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

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“…For this purpose GaN cells are usually housed in a hermetically sealed package for subsequent integration in high power module along with other matching networks. Output power of such packaged parts currently exceed few 100 Watts [1] [2]. Although good unit cell models exist for GaN devices [3][4][5][6], modeling such packaged parts poses significant challenge as the cells are deeply embedded in package (Fig.1).…”

Section: Introductionmentioning

confidence: 99%

Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices

Haldar¹,

Kharabi²,

Howle³

et al. 2012

79th ARFTG Microwave Measurement Conference

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In this paper lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling behavior on standard elements. The model is integrated with GaN unit cell model to construct a package device. The model behavior is validated at 0.9, 2.1 and 3.5GHz for output power levels exceeding 100Watts for 1 to 10 cells at 48Volts.

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100 W GaN HEMT power amplifier module with 60% efficiency over 100–1000 MHz bandwidth

Cited by 6 publications

References 0 publications

Broadband performance assessment of a microwave power transistor employing the real frequency technique

Broadband performance assessment of a microwave power transistor employing the real frequency technique

Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices

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