100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

Chen, Hong Tao; Galili, Michael; Verheyen, Peter; Heyn, Peter De; Lepage, Guy; Coster, J. De; Balakrishnan, Sadhishkumar; Absil, P.; Oxenløwe, Leif Katsuo; Campenhout, Joris Van; Roelkens, Günther

doi:10.1109/jlt.2016.2593942

Cited by 75 publications

(53 citation statements)

References 21 publications

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“…Compared to previous waveguide arrangements where carriers were generated in the entire area limited only by metal contacts (Fig. 7a, b) [20][21][22][23][24] (without a bias voltage ( Fig. 7a) and under a bias voltage (Fig.…”

Section: Symmetric and Asymmetric Electrodesmentioning

confidence: 80%

“…Conventional Ge waveguide photodetectors require deposition of metal contacts on Ge. This process, however, introduce a significant losses what influence device responsivity [21][22][23]. To reduce these losses, new Ge PIN waveguide photodetectors were proposed that exploit lateral Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions.…”

Section: Germanium Photodetectorsmentioning

confidence: 99%

See 1 more Smart Citation

High-bandwidth and high-responsivity waveguide-integrated plasmonic germanium photodetector

Gosciniak

Rasras

2019

J. Opt. Soc. Am. B

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Here we propose a waveguide-integrated germanium plasmonic photodetector that is based on a long-range dielectric-loaded surface plasmon polariton waveguide configuration. As this configuration ensures a long propagation distance, i.e., small absorption into metal, and a good mode field confinement, i.e., high interaction of the electric field with a germanium material, it is perfect for a realization of plasmonic germanium photodetectors. Such a photodetector even without optimization provides a responsivity exceeding 1 A/W for both wavelengths of 1310 nm and 1550 nm. To achieve such a responsivity, only a 5 μm-long waveguide is required for 1310 nm and 30 μm-long for 1550 nm. With optimization this value can be highly improved. In the proposed arrangement a metal stripe simultaneously supports a propagating mode and serves as one of the electrodes, while the second electrode is located a short distance from the waveguide. As a propagating mode is tightly confined to the germanium ridge, the external electrode can be placed very close to the waveguide without disturbing it. As such, the distance between electrodes can be smaller than 350 nm which allows one to achieve a bandwidth exceeding 100 GHz. However, as most of the carriers are generated inside a distance of 100 nm from a stripe, a bandwidth exceeding 150 GHz can be achieved for a bias voltage of -4 V.

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Section: Symmetric and Asymmetric Electrodesmentioning

confidence: 80%

Section: Germanium Photodetectorsmentioning

confidence: 99%

High-bandwidth and high-responsivity waveguide-integrated plasmonic germanium photodetector

Gosciniak

Rasras

2019

J. Opt. Soc. Am. B

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“…Input light is end-fire coupled from an input silicon nitride (Si 3 N 4 ) rectangular waveguide, which has high transmittivity at visible wavelengths [9]. We choose this input coupling geometry over a phase-matched interlayer transition, commonly used in integrated photodetectors for infrared wavelengths [11], [18], as the latter is difficult to achieve due to the large difference in refractive indices for Si (n = 3.8) and Si 3 N 4 (n = 2.1). An input coupling efficiency of >90% at the Si/Si 3 N 4 interface is obtained using 3D Finite Difference Time Domain (FDTD) simulations (Lumerical).…”

Section: Waveguide-coupled Spad Designs a Device Geometrymentioning

confidence: 99%

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Yanikgonul

Leong

Ong

et al. 2020

IEEE J. Select. Topics Quantum Electron.

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Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art integrated quantum photonics demonstrations still require the coupling of light to external photodetectors. On-chip silicon single-photon avalanche diodes (SPADs) provide a viable solution as they can be seamlessly integrated with photonic components, and operated with high efficiencies and low dark counts at temperatures achievable with thermoelectric cooling. Moreover, they are useful in applications such as LIDAR and low-light imaging. In this paper, we report the design and simulation of silicon waveguide-based SPADs on a silicon-on-insulator platform for visible wavelengths, focusing on two device families with different doping configurations: p-n + and p-i-n + . We calculate the photon detection efficiency (PDE) and timing jitter at an input wavelength of 640 nm by simulating the avalanche process using a 2D Monte Carlo method, as well as the dark count rate (DCR) at 243 K and 300 K. For our simulated parameters, the optimal p-i-n + SPADs show the best device performance, with a saturated PDE of 52.4 ± 0.6% at a reverse bias voltage of 31.5 V, full-width-half-max (FWHM) timing jitter of 10 ps, and a DCR of < 5 counts per second at 243 K.

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“…Still, silicon photonics processes are now considered to be sufficiently good for a number of applications, as is demonstrated by products released on the market. The various fabs provide processes for silicon waveguides with acceptable propagation losses around 1‐2 dB cm −1 , thermal tuners with phase shifter efficiencies ranging from 100 µW

π^{- 1}

to 100 mW

π^{- 1}

, carrier‐based electro‐optic modulators working in both travelling wave and resonant modes, and Germanium photodetectors with efficiencies of

\approx 1 A W^{- 1}

, with both modulators and detectors operating at high‐speeds of many tens of gigahertz. Spectral filters can be implemented using combinations of waveguides and coupling structures .…”

Section: Introductionmentioning

confidence: 99%

Silicon Photonics Circuit Design: Methods, Tools and Challenges

Bogaerts

Chrostowski

2018

Laser & Photonics Reviews

420

230

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Silicon Photonics technology is rapidly maturing as a platform for larger‐scale photonic circuits. As a result, the associated design methodologies are also evolving from component‐oriented design to a more circuit‐oriented design flow, that makes abstraction from the very detailed geometry and enables design on a larger scale. In this paper, the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA) are reviewed. The design flow from schematic capture, circuit simulation, layout and verification is covered. The similarities and the differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic‐electronic co‐simulation and compact model definition are discussed.

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100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

Abstract: Abstract-We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 µm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.

Cited by 75 publications

References 21 publications

High-bandwidth and high-responsivity waveguide-integrated plasmonic germanium photodetector

High-bandwidth and high-responsivity waveguide-integrated plasmonic germanium photodetector

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Silicon Photonics Circuit Design: Methods, Tools and Challenges

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