100 Gbit/s WDM transmission at 2 µm: transmission studies in both low-loss hollow core photonic bandgap fiber and solid core fiber

Zhang, H.; Kavanagh, N.; Li, Z.; Zhao, Jie; Ye, N.; Chen, Yong; Wheeler, Natalie V.; Wooler, J. P.; Hayes, J. R.; Sandoghchi, Seyed Reza; Poletti, F.; Petrovich, M. N.; Alam, Shaif-ul; Phelan, Richard; O’Carroll, John; Kelly, Brian; Grüner-Nielsen, L.; Richardson, David J.; Corbett, Brian; Gunning, Fatima C. Garcia

doi:10.1364/oe.23.004946

Cited by 116 publications

(42 citation statements)

References 14 publications

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“…This progress along with the recent developments of high-speed optical detection 17 and low-loss optical fibers 18 may pave the way towards 2 m communications based on silicon photonics. 19 However, in contrast to their III-V counterparts, GeSn binaries are either just direct or exhibit only a rather small directness E L- ≥ 0, with E L- being the energy difference between the L-and -valleys.…”

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confidence: 97%

Optical Transitions in Direct-Bandgap Ge_1–xSn_x Alloys

et al. 2015

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A comprehensive study of optical transitions in direct bandgap Ge 0.875 Sn 0.125 group IV alloys via photoluminescence measurements as a function of temperature, compressive strain and excitation power is performed. The analysis of the integrated emission intensities reveals a strain-dependent indirect-to-direct bandgap transition, in good agreement with band structure calculations based on 8 band k•p and deformation potential method. We have observed and quantified  valley -heavy hole and  valley -light hole transitions at low pumping power and low temperatures in order to verify the splitting of the valence band due to strain. We will demonstrate that the intensity evolution of these transitions supports the conclusion about the fundamental direct bandgap in compressively strained GeSn alloys. The presented investigation, thus, demonstrates that direct bandgap group IV alloys can be directly grown on Ge-buffered Si(001) substrates despite their residual compressive strain.2 KEYWORDS: direct bandgap, photoluminescence, germanium tin, group IV, compressive strain TOC GRAPHIC 3 Group IV semiconductors are known for their excellent electronic transport properties but limited optical applicability due to their indirect bandgap nature, turning them into inefficient light emitters. However, the pioneering work of R.Soref and C.H. Perry 1 and, later He and Atwater 2 as well as subsequent theoretical studies [3][4][5] indicated that alloying two group IV elements, i.e. semiconducting Ge and semimetallic -Sn, should result in a group IV semiconductor which could be tuned from a fundamental indirect to a direct bandgap material by increasing the substitutional Sn concentration in the Ge lattice. Although it was unanimously accepted that the -valley of the conduction band can be decreased below the Lvalley, theoretical estimates of the required Sn content for this transition as well as the impact of strain on the transition are widely spread. 6,7 This prospect has driven large efforts to grow device-grade GeSn epilayers, [8][9][10][11] prove their fundamental direct bandgap and finally to demonstrate photonic functionality. Recently, advances in Chemical Vapor Deposition (CVD)of GeSn binaries with high Sn contents of up to 14% has been reported 9,10,12-15 which enabled not only the proof of the direct bandgap nature but also the unambiguous demonstration of laser action at 2.3 µm under optical pumping. 16 Hence, direct bandgap GeSn alloys are CMOS-compatible IV-IV semiconductors with novel optical and electrical properties that are similar to those of III-V and II-VI compounds, used today in optoelectronic applications, i.e. The growth temperature (350°C), the total pressure and the partial pressures of the source gases were kept constant, resulting in the growth of GeSn alloys with a Sn content of 12.5 ± 0.5%. 11,15 Due to the lattice mismatch between the GeSn film and Ge virtual substrate, the GeSn layers were biaxially compressively strained. The films are fully strained for thicknesses below the critical t...

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confidence: 97%

Optical Transitions in Direct-Bandgap Ge_1–xSn_x Alloys

et al. 2015

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“…This has stimulated studies of dedicated photonic components such as InP-based modulators [7,8] or arrayed waveguide gratings [9]. High bit rate communications over distances exceeding one hundred meters have already been successfully demonstrated [10][11][12][13] in low-loss hollow core bandgap photonic fibers designed to present minimal losses around 2000 nm [14] or in solid-core single mode fibers [15].…”

Section: Introductionmentioning

confidence: 99%

Demonstration of High-Speed Optical Transmission at 2 µm in Titanium Dioxide Waveguides

et al. 2017

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“…Another application of 2 µm sources that has recently attracted attention is optical fibre communications [5][6][7][8][9][10]. This interest is being driven by demonstrations of low-loss hollowcore photonic band-gap fibers (HC-PBGFs) which offer a transmission medium possessing ultra-low nonlinearity, low latency, and with the potential for a broad ultra-low loss window at wavelengths around 2 µm [11].…”

Section: Introductionmentioning

confidence: 99%

High gain holmium-doped fibre amplifiers

Simakov¹,

Li²,

Jung³

et al. 2016

Opt. Express

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Abstract:We investigate the operation of holmium-doped fibre amplifiers (HDFAs) in the 2.1 µm spectral region. For the first time we demonstrate a diode-pumped HDFA. This amplifier provides a peak gain of 25 dB at 2040 nm with a 15 dB gain window spanning the wavelength range 2030 -2100 nm with an external noise figure (NF) of 4-6 dB. We also compare the operation of HDFAs when pumped at 1950 nm and 2008 nm. The 1950 nm pumped HDFA provides 41 dB peak gain at 2060 nm with 15 dB of gain spanning the wavelength range 2050 -2120 nm and an external NF of 7-10 dB. By pumping at the longer wavelength of 2008 nm the gain bandwidth of the amplifier is shifted to longer wavelengths and using this architecture a HDFA was demonstrated with a peak gain of 39 dB at 2090 nm and 15 dB of gain spanning the wavelength range 2050 -2150 nm. The external NF over this wavelength range was 8-14 dB. nm gain extension towards 1.7 μm for diode-pumped silica-based thulium-doped fiber 2016 Optical Society of America

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100 Gbit/s WDM transmission at 2 µm: transmission studies in both low-loss hollow core photonic bandgap fiber and solid core fiber

Cited by 116 publications

References 14 publications

Optical Transitions in Direct-Bandgap Ge_1–xSn_x Alloys

Optical Transitions in Direct-Bandgap Ge_1–xSn_x Alloys

Demonstration of High-Speed Optical Transmission at 2 µm in Titanium Dioxide Waveguides

High gain holmium-doped fibre amplifiers

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100 Gbit/s WDM transmission at 2 µm: transmission studies in both low-loss hollow core photonic bandgap fiber and solid core fiber

Cited by 116 publications

References 14 publications

Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

Demonstration of High-Speed Optical Transmission at 2 µm in Titanium Dioxide Waveguides

High gain holmium-doped fibre amplifiers

Contact Info

Product

Resources

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Optical Transitions in Direct-Bandgap Ge_1–xSn_x Alloys

Optical Transitions in Direct-Bandgap Ge_1–xSn_x Alloys