Optical Properties and Surface Morphology of ZnTe Thin films Prepared by Multiple Potential Steps

Preparation of ZnTe thin films using chemical bath deposition technique

“…We have found that the precipitation time does not affect the transmittance and absorbance for all layers. Therefore, it does not clearly affect the energy gap of these layers which was of about 2.7-2.75 ev, as shown in Figure 3 [17,21,[25][26][27][28].…”

“…Thin films of ZnTe can be obtained by different physical and chemical techniques both at room and at high temperature. The more common techniques used to prepare polycrystalline thin films of ZnTe are thermal evaporation, sputtering, chemical vapor deposition and electrodeposition [32]. To the best of our knowledge chemical bath deposition ZnTe thin films on glass substrate.…”

“…The semiconductor zinc is one of the most important semiconductors because of its optical and electrical properties. It has a rather large direct energy gap of 2.26-2.3 eV, which makes it suitable in many uses including [7], light emitting diodes (LED) [8,9], terahertz (THz) devices [10] electronic devices [11] and photo sensors [12][13][14].…”

“…The semiconductor is made up of two elements, zinc and tellurium, and their interaction requires high temperatures to form a semiconductor. Numerous techniques were used in preparing this semiconductor, including thermal evaporation, chemical vapor deposition [19], but until recently the chemical bath deposition technique was not often used for the preparation of ZnTe [20,21].…”