Synthesis and characterization of novel ZrO2-SiO2 mixed oxides

Abstract

In this study the mixed oxides ZrO 2 -SiO 2 , were synthesized by the sol-gel method with a molar ratio of 95:5 (Si/metal) and characterized by X-ray diffraction, absorption-desorption of N 2 , Fourier transform infrared spectroscopy, thermal gravimetric analysis, temperature-programmed desorption of ammonia, and acidity test by titration. The synthesized materials, which are amorphous to X-rays, are composed of a mixture of micro-and mesopores. They show a higher acid strength than the separate oxides, indicating that the ZrO 2 is highly dispersed in the silica matrix.

Photoluminescence quenching of Zirconia nanoparticle by surface modification

“…Zirconia nanoparticles (ZrO 2 -NPs) is a choice of materials for catalysts, advanced ceramics, optical devices, electrochemical capacitor electrodes, sensors, fuel cells due to high refractive index and oxygen ion-conduction [1][2][3][4][5][6][7][8][9][10]. ZrO 2 -NPs have been synthesized using variety of techniques like sol-gel processing [11,12], chemical vapor synthesis [13], precipitation from solutions [14,15], plasma synthesis [16], condensation [17], combustion synthesis [18], ultrasonically assisted hydrothermal synthesis [19] and laser ablation [20].…”

Preparation and characterisation of aluminium zirconium oxide for metal‐oxide‐semiconductor capacitor

“…Alongside with the detection of amorphous SiO x , the presence of amorphous AlO 4 tetrahedral at 446 cm −1 , 55 amorphous ZrO 2 at 389 cm −1 , 56 Al-O-Si at 729 cm −1 , 57 Zr-O-Si at 416 cm −156 and 976 cm −1 has further supported the formation of Zr-Al-Si-O and Zr-O-Si-containing interfacial layer. 53 Moreover, absorption peak located at 1112 cm −1 signified the presence of oxygen interstitials in the investigated films, 58 together with other absorption bands detected for monoclinic phase of ZrO 2 at 454 cm −159 and tetragonal phases of ZrO 2 at 670 cm −1 , 60 542 cm −1 , 56 501 cm −1 , 59 473 cm −1 , 56 and 403 cm −1 . 59 Figure 9 presents absorption features of Al x Zr y O z films grown from 400 C to 1000 C using Fourier Transformed Infrared (FTIR) spectroscopy.…”

“…The formation of interfacial layer at 1000°C was comprised of a mixture consisting of a higher concentration of Zr‐Al‐Si‐O and Zr‐O‐Si compounds, as being divulged from the area under the peaks from Raman measurement as well as an acquisition of the highest intensity of transverse‐optical (1078 cm −1 ) 53 and longitudinal‐optical (1260 cm −1 ) 54 modes for symmetric Si‐O‐Si stretching vibration detected using FTIR measurement for amorphous SiO x (Figure 9). Alongside with the detection of amorphous SiO x , the presence of amorphous AlO 4 tetrahedral at 446 cm −1 , 55 amorphous ZrO 2 at 389 cm −1 , 56 Al‐O‐Si at 729 cm −1 , 57 Zr‐O‐Si at 416 cm −1 56 and 976 cm −1 has further supported the formation of Zr‐Al‐Si‐O and Zr‐O‐Si‐containing interfacial layer 53 . Moreover, absorption peak located at 1112 cm −1 signified the presence of oxygen interstitials in the investigated films, 58 together with other absorption bands detected for monoclinic phase of ZrO 2 at 454 cm −1 59 and tetragonal phases of ZrO 2 at 670 cm −1 , 60 542 cm −1 , 56 501 cm −1 , 59 473 cm −1 , 56 and 403 cm −1 59 .…”

Co2SiO4 nanostructures: New simple synthesis, characterization and investigation of optical property

“…In the alkaline condition, TEOS molecules are not full hydrolyzed. When the hydrolysis process is incomplete, polymerized species are formed after condensation [15,16]. During the solvothermal reaction, organic chains of the products obtained from hydrolysis and condensation of TEOS burn, which leads to silica matrices; different compounds of cobalt coexist into the SiO 2 : cobalt acetate, hexoaquo cobalt complexes (ions solvated), partially hydrolysed cobalt complexes and cobalt oxides [14].…”