Development and comparison of n+pn+ and n+pp+ solar cells in multicrystalline silicon

Abstract

The goal of this paper is to present the development and comparison of p-type multicrystalline silicon solar cells with screen printed metallization. Industrial processes were developed to manufacture the n ) back surface field (BSF) was 13.8% and 14.1%, respectively. The BSF does not result in a significant improvement in the efficiency when the diffusion is carried out in a single step thermal diffusion in industrial process with screen printed metallization.

Influence of Different Metals Back Surface Field on BSF Silicon Solar Cell Performance Deposited by Thermal Evaporation Method

“…Cell Performance Deposited by Thermal Evaporation Method [4]. To minimize the surface recombination loss at the back-surface of photovoltaic cells, instead of primarily invented n + p solar cell, n + -p-p + and p + -p-n + type solar cell also known as low-high or back surface field (BSF) solar cell has been already introduced in industrial production [7][8][9][10][11]. The highly doped p + region with the lightly doped p-type semiconductor result in an electric field commonly known as Back Surface Field (BSF) [9].…”