The goal of this paper is to present the development and comparison of p-type multicrystalline silicon solar cells with screen printed metallization. Industrial processes were developed to manufacture the n ) back surface field (BSF) was 13.8% and 14.1%, respectively. The BSF does not result in a significant improvement in the efficiency when the diffusion is carried out in a single step thermal diffusion in industrial process with screen printed metallization.
O crescimento do mercado de células solares e a necessidade de substratos de menor custo tornam o silício multicristalino a principal alternativa para a fabricação de tais células. O objetivo desse artigo é apresentar o desenvolvimento de um processo industrial para fabricação de células solares em silício multicristalino com somente uma difusão de fósforo e metalização por serigrafia. Por meio de simulações, foram otimizados o emissor n+ e a malha de metalização. Também foram analisadas a influência da largura das trilhas e a influência do tempo de vida dos minoritários. Experimentalmente, foi avaliada a influência do processo de queima das pastas de metalização. De acordo com as simulações, o valor da resistência de folha deve ser maior que 50 Ω/□, para que a eficiência não diminua. Também se concluiu que a eficiência diminui de 0,3% a 0,5%, quando a largura das trilhas da malha de metalização é dobrada. Dos resultados experimentais, constatou-se que a temperatura de queima das pastas de metalização afeta, concretamente, a eficiência. A maior eficiência alcançada foi de 11,5%, para a temperatura de queima de 860°C.
The diffusion of phosphorus and aluminum in a single-step thermal process may reduce the production cost of multicrystalline silicon (mc-Si) solar cells. The goal of this paper is to analyze the influence of phosphorus diffusion parameters on the electrical characteristics of p-type mc-Si solar cells processed with a single-step diffusion of phosphorus and aluminum. To avoid the wafer bowing during aluminum paste firing, the aluminum was deposited by e-beam and co-diffused in the same thermal step that the phosphorus diffusion. First, the aluminum diffusion was performed and, then, the POCl 3 was introduced into the quartz tube. The steps of the phosphorus diffusion were experimentally optimized. The best result was found with the temperature of 875 ºC. The POCl 3 concentration of 0.15% and the optimized phosphorus diffusion parameters lead to the efficiency of 14.1%. The reduction of the oxygen flow during ramp temperature and aluminum diffusion improved the efficiency.
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