Study of indium nitride and indium oxynitride band gaps

Abstract

This work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999%) target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz) constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL) and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In.

Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor

“…The resistivity of In 2 O 3 is beyond the measurement limits of the instruments. InN is well known to be a narrow bandgap material ( E g = 0.7–1.5), − and the measured data reflect its conductive nature ( N e > 1020 cm –3 ). The Hall mobility of InN is rather low (11.0 cm 2 V –1 s –1 ), which is highly likely to originate from the scattering between individual carriers.…”

Analysis of the ways to provide ecological safety for the products of nanotechnologies throughout their life cycle

“…4). We will accept indium nitride (InN/por-InP), which is widely used in optoelectronics, photoelectric and photovoltaic devices as a product based on porous indium phosphide [22].…”