2002
DOI: 10.1590/s0366-69132002000100009
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Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Abstract: The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with ele… Show more

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Cited by 5 publications
(3 citation statements)
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References 12 publications
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“…The surface of objects with complicated shapes (as are implants and prostheses) can be conformally coated by operating at low pressure (LP-MOCVD) [16,17]. Varied film morphologies and microstructures can be obtained by playing with the several experimental parameters: nature of the precursor, nature of the carrier gas, optional use of an additional reactive gas, deposition temperature (T deposition ), total pressure (P total ), precursor molar fraction (X precursor ), gas flow rates (Q total , Q precursor ) [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…The surface of objects with complicated shapes (as are implants and prostheses) can be conformally coated by operating at low pressure (LP-MOCVD) [16,17]. Varied film morphologies and microstructures can be obtained by playing with the several experimental parameters: nature of the precursor, nature of the carrier gas, optional use of an additional reactive gas, deposition temperature (T deposition ), total pressure (P total ), precursor molar fraction (X precursor ), gas flow rates (Q total , Q precursor ) [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…Dye-sensitizer plays a role for light harvesting and electrons trasportation 24,25) . As for the lm deposition technologies, various technologies have been practically utilized for the deposition of photo-catalytic TiO 2 lm such as metal organic chemical vapor and sputtering [26][27][28] . However, there are several problems associated with these techniques such as low deposition rate and high initial cost due to vacuum equipment.…”
Section: Introductionmentioning
confidence: 99%
“…O valor encontrado é de, aproximadamente, 12 nm/min, valor próximo ao estimado pelos trabalhos anteriores do grupo de pesquisa 10,45 . 75 e Bernardi et al 133 . O aumento da espessura dificulta a mobilidade eletrônica, pois faz com que os fótons percorram distâncias maiores, dada a profundidade de penetração da luz necessária para ativar o semicondutor e produzir os radicais hidroxila 5 .…”
Section: Ensaios De Durabilidade Do Catalisadorunclassified