Lead telluride p-n junctions for infrared detection: electrical and optical characteristics

Abstract

PbTe mesa diodes were fabricated from a series of p − n junctions grown on BaF 2 substrates. For this series, the hole concentration was kept constant at 10 17 cm −3 and the electron concentration varied between 10 17 and 10 19 cm −3 . Capacitance versus voltage analysis revealed that for n > 10 18 cm −3 , a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage curves exhibited different forms among the diodes. The R 0 A product varied between 0.23 and 31.8 Ωcm 2 , and the integral detectivity ranged from 1.1x10 8 to 6.5x10 10 cmHz 1/2 W −1 . The performance of the best PbTe photodiodes fabricated here is comparable to the commercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate.

Polishing etchant compositions for the chemical treatment of the PbTe and Pb1–xSnxTe solid solutions single crystals and methods for their processing. Review

“…Under the subsequent treatment of the samples in boiling 50% NaOH solution and dilute HCl, only Те was detected on the surface. For chemical etching of the PbTe surface, a solution of Br 2 :HBr:H 2 O (volume ratio 1:40:40) can be also used [11].…”

Experimental and theoretical study of the electronic structure and optical spectral features of PbIn6Te10

“…At the same time due to the wide transparency in the infra-red (IR) region their optoelectronic features are very useful for applications. 2 The lattice anharmonicity results in anharmonic phonons which possess asymmetry described by third rank polar tensors, similarly to effects of second harmonic generation, linear electro-optics, piezo-electricity etc. Additionally they possess promising thermal conductivity, photostimulated thermal expansion and temperature dependent elastic constants.…”