Magnetotransport in Al xGa x-1As quantum wells with different potential shapes

Abstract

We compare the transport properties for triangular, parabolic and cubic quantum wells. We calculate the transport mobility for electrons belonging to the different subbands. We obtain the energy spacing between first and second subbands from the electron sheet density and compare results for different potential profiles. We find that experimental results are in quantitative agreements with our calculations.

Oscillation of Electron Mobility in V‐Shaped Double Quantum Well Structure Under Applied Electric Field

“…The electron mobility µ is demonstrated as a function of 2D‐electron density in GaAs/Al x Ga 1 −x As QWs by considering triangular, parabolic, and cubic potential structures . It has been shown that in a wide well structure the background impurity limits the mobility . Although a great deal of efforts has been made to investigate the optical properties of the non‐square potential well structures, very few attempts have been made to study the electron transport properties of these structures.…”

“…In recent years, there is considerable interest in the study of semiconductor quantum well (QW) structures having different shapes of confinement potentials, viz., square, parabolic, graded, V‐shaped, inverse parabolic, triangular, etc., because of their applications in devices . The change in the potential profile of a quantum well affects the subband energy states.…”

“…The theoretical study of the optical properties, such as laser dressing effects, polarizability, optical absorption coefficient has been made by considering GaAs/Al x Ga 1 −x As based QWs with different shapes of potentials. The electron mobility µ is demonstrated as a function of 2D‐electron density in GaAs/Al x Ga 1 −x As QWs by considering triangular, parabolic, and cubic potential structures . It has been shown that in a wide well structure the background impurity limits the mobility .…”

Electron transport in Al x Ga1−x As based double quantum well modulation doped field effect transistor structure: effect of non-square potential profile

“…The specific nature of these potentials also causes dramatic change in the electrical and optical properties of the system [4,7,9]. The potentials like parabolic [1][2][3][4], triangular [5][6][7][8][9], graded [10][11][12], V-shaped [13][14][15], cubic [14,15], inverse-parabolic [16][17][18], semi-parabolic [19,20], inverse V-shaped [21], semi V-shaped [22], square-parabolic [23], Gaussian [24] etc are the examples of such systems. Light emitting diodes based on triangular-shaped QWs have more internal quantum efficiency compared to that of rectangular ones [6].…”

“…Radu et al have calculated laser-dressed states of electrons in graded QWs [10]. Magnetotransport properties of non-square QWs are studied by Mamani et al [15]. Ozturk et al have compared the linear optical absorption coefficients of parabolic with inverse parabolic QWs through the dipole moment matrix elements [16].…”